Yousef M Alimi

US Patent:

7683636, Mar 23, 2010

Filed:

Oct 26, 2007

Appl. No.:

11/977799

Inventors:

Yousef M. Alimi - Allen TX, US
Richard A. Davis - Plano TX, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

G01R 27/26
H01G 5/012

US Classification:

324664, 324689, 361286

Abstract:

An improved relative humidity sensor apparatus that provides a more accurate measurement of humidity in the presence of water condensation. A series capacitive sensor includes a thin porous platinum top plate, a humidity sensitive polyimide dielectric, and two metal bottom plates on a semiconductor substrate. The two capacitors can be wired in series such that the metal bottom plates form independent, electrically driven connections. The thin top layer can form a top plate. Changes in humidity affect the humidity sensitive dielectric thereby causing changes in the capacitive value. A P-well layer and a P-plus layer can be added at the perimeter of the substrate to create a path for a parasitic capacitance caused by water condensation to connect to one or more connection nodes, thereby preventing erroneous measurements of humidity in the presence of water condensation.

US Patent:

7710128, May 4, 2010

Filed:

Sep 9, 2006

Appl. No.:

11/518649

Inventors:

Yousef M. Alimi - Allen TX, US
Richard A. Davis - Plano TX, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

G01R 27/26

US Classification:

324689, 3613063, 324664, 7333502

Abstract:

A humidity sensor apparatus and method of forming the same. A substrate can be provided upon which a plurality of humidity sensing components are disposed to form a humidity sensor thereof. Each humidity sensing component generally includes an associated particular parasitic capacitance. This parasitic capacitance is utilized to reduce and/or control a sensitivity and a total capacitance value associated with the humidity sensor without increasing a size of the humidity sensor and/or humidity sensor components (e. g. , capacitors).

US Patent:

7924028, Apr 12, 2011

Filed:

Mar 20, 2008

Appl. No.:

12/052535

Inventors:

Yousef Alimi - Allen TX, US
Richard Alan Davis - Plano TX, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

G01R 27/26

US Classification:

324664, 324689

Abstract:

A method and system for adjusting characteristics of a relative humidity sensor in order to achieve a desired value of accuracy is presented. A relative humidity sensor charge balance circuit includes a series of sensing capacitors Cx, Cx including a thin porous platinum top plate, a humidity sensitive polyimide dielectric, and two metal bottom plates on a semiconductor substrate; and two fixed oxide capacitances Cref, and C. Changes in humidity affect the humidity sensitive dielectric thereby causing changes in the sensing capacitive value of the capacitive circuit. The charge in the sensing capacitor and the fixed capacitor C can be controlled separately by adjusting and/or trimming the supply voltage using a voltage trimmer; thereby the slope and offset of the relative humidity sensor circuit can be modified and controlled to particular desired values.

US Patent:

20060157809, Jul 20, 2006

Filed:

Jan 20, 2005

Appl. No.:

11/038881

Inventors:

Yousef Alimi - Allen TX, US
James Biard - Richardson TX, US
Gilberto Morales - Arlington TX, US

International Classification:

H01L 43/00
H01L 29/82

US Classification:

257421000

Abstract:

A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.

US Patent:

20130271124, Oct 17, 2013

Filed:

Apr 17, 2012

Appl. No.:

13/449149

Inventors:

Richard Kirkpatrick - Richardson TX, US
Yousef M. Alimi - Allen TX, US

Assignee:

HONEYWELL INTERNATIONAL INC. - Morristown NJ

International Classification:

G01R 33/09
G01R 33/07
G01R 33/02

US Classification:

324251, 324244, 324252

Abstract:

An illustrative packaged magnetic field sensor includes a power input terminal and a sensor output terminal, both accessible from outside of the package housing. A sensing block is situated in the package housing and electrically coupled to the magnetic field sensing device and the sensor output terminal. An adjustment block is situated in the package housing and coupled to the power input terminal and the sensing block. In some cases, the adjustment block may receive one or more messages that include sensor adjustment information. The one or more messages may be modulated onto the power input signal. The adjustment block may decode the received sensor adjustment information from the messages, and store the decoded adjustment information into a memory. The adjustment block may then adjust the output signal of the sensing block based on the decoded adjustment information.