Yu D Cong from 128 Lois Ln, Palo Alto, CA 94303, age 56

Us Patents

Plasma Reactor And Shields Generating Self-Ionized Plasma For Sputtering
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US Patent:

6398929, Jun 4, 2002
Filed:

Oct 8, 1999
Appl. No.:

09/414614
Inventors:

Tony P. Chiang - San Jose CA
Yu D. Cong - Sunnyvale CA
Peijun Ding - San Jose CA
Jianming Fu - San Jose CA
Howard H. Tang - San Jose CA
Anish Tolia - San Jose CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 1434
US Classification:

20429811
Abstract:

A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200 mm wafer is preferably at least 10 kW; more preferably, at least 18 kW; and most preferably, at least 24 kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling.

Method For Unreacted Precursor Conversion And Effluent Removal
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US Patent:

6402806, Jun 11, 2002
Filed:

Jun 30, 2000
Appl. No.:

09/608659
Inventors:

John Vincent Schmitt - Sunnyvale CA
Ling Chen - Sunnyvale CA
George Michael Bleyle - Fremont CA
Yu Cong - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C22B 1500
US Classification:

75414, 75639, 4232453, 423240 R, 427253
Abstract:

A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

Method For Igniting A Plasma In A Sputter Reactor
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US Patent:

6413383, Jul 2, 2002
Filed:

Oct 10, 2000
Appl. No.:

09/685988
Inventors:

Tony P. Chiang - San Jose CA
Yu D. Cong - Sunnyvale CA
Peijun Ding - San Jose CA
Jianming Fu - San Jose CA
Howard H. Tang - San Jose CA
Anish Tolia - San Jose CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 1434
US Classification:

20419213, 20419212
Abstract:

A DC magnetron sputter reactor for sputtering copper, its method of use, particularly the ignition sequence, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.

Process For Sputtering Copper In A Self Ionized Plasma
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US Patent:

6582569, Jun 24, 2003
Filed:

Oct 10, 2000
Appl. No.:

09/685978
Inventors:

Tony P. Chiang - San Jose CA
Yu D. Cong - Sunnyvale CA
Peijun Ding - San Jose CA
Jianming Fu - San Jose CA
Howard H. Tang - San Jose CA
Anish Tolia - San Jose CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 1434
US Classification:

20419217, 20419212, 20419215, 20429819, 2042982, 438680, 438687
Abstract:

A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.

Multi-Step Process For Depositing Copper Seed Layer In A Via
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US Patent:

6893541, May 17, 2005
Filed:

Dec 20, 2002
Appl. No.:

10/326496
Inventors:

Tony P. Chiang - San Jose CA, US
Yu D. Cong - Sunnyvale CA, US
Peijun Ding - San Jose CA, US
Jianming Fu - San Jose CA, US
Howard H. Tang - San Jose CA, US
Anish Tolia - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C014/34
US Classification:

20419217, 20419215, 438685, 438687, 205186
Abstract:

A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.

Chemical Vapor Deposition Hot-Trap For Unreacted Precursor Conversion And Effluent Removal
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US Patent:

60996498, Aug 8, 2000
Filed:

Dec 23, 1997
Appl. No.:

8/996735
Inventors:

John Vincent Schmitt - Sunnyvale CA
Ling Chen - Sunnyvale CA
George Michael Bleyle - Fremont CA
Yu Cong - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 1600
US Classification:

118715
Abstract:

A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

Yu Cg Eng v. Trinidad

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In the legal case of Yu Cong Eng v. Trinidad, the Supreme Court of the United States decided that a law passed by the U.S. colonial government of the Philippines in ...

Yu Cg

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Yu Cong () (died 881), courtesy name Liyong (), was an official of the Chinese dynasty Tang Dynasty, serving as a chancellor during the reign of his ...