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Yu D Cong

age ~52

from Palo Alto, CA

Also known as:
  • Cong Yu
  • Y U Cong
  • Yu U Cong
  • Yu Yanmei t Cong

Yu Cong Phones & Addresses

  • Palo Alto, CA
  • 406 Hogarth Ter, Sunnyvale, CA 94087
  • Santa Clara, CA
  • Urbana, IL

Us Patents

  • Plasma Reactor And Shields Generating Self-Ionized Plasma For Sputtering

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  • US Patent:
    6398929, Jun 4, 2002
  • Filed:
    Oct 8, 1999
  • Appl. No.:
    09/414614
  • Inventors:
    Tony P. Chiang - San Jose CA
    Yu D. Cong - Sunnyvale CA
    Peijun Ding - San Jose CA
    Jianming Fu - San Jose CA
    Howard H. Tang - San Jose CA
    Anish Tolia - San Jose CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1434
  • US Classification:
    20429811
  • Abstract:
    A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200 mm wafer is preferably at least 10 kW; more preferably, at least 18 kW; and most preferably, at least 24 kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling.
  • Method For Unreacted Precursor Conversion And Effluent Removal

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  • US Patent:
    6402806, Jun 11, 2002
  • Filed:
    Jun 30, 2000
  • Appl. No.:
    09/608659
  • Inventors:
    John Vincent Schmitt - Sunnyvale CA
    Ling Chen - Sunnyvale CA
    George Michael Bleyle - Fremont CA
    Yu Cong - Sunnyvale CA
    Alfred Mak - Union City CA
    Mei Chang - Saratoga CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C22B 1500
  • US Classification:
    75414, 75639, 4232453, 423240 R, 427253
  • Abstract:
    A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
  • Method For Igniting A Plasma In A Sputter Reactor

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  • US Patent:
    6413383, Jul 2, 2002
  • Filed:
    Oct 10, 2000
  • Appl. No.:
    09/685988
  • Inventors:
    Tony P. Chiang - San Jose CA
    Yu D. Cong - Sunnyvale CA
    Peijun Ding - San Jose CA
    Jianming Fu - San Jose CA
    Howard H. Tang - San Jose CA
    Anish Tolia - San Jose CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1434
  • US Classification:
    20419213, 20419212
  • Abstract:
    A DC magnetron sputter reactor for sputtering copper, its method of use, particularly the ignition sequence, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.
  • Process For Sputtering Copper In A Self Ionized Plasma

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  • US Patent:
    6582569, Jun 24, 2003
  • Filed:
    Oct 10, 2000
  • Appl. No.:
    09/685978
  • Inventors:
    Tony P. Chiang - San Jose CA
    Yu D. Cong - Sunnyvale CA
    Peijun Ding - San Jose CA
    Jianming Fu - San Jose CA
    Howard H. Tang - San Jose CA
    Anish Tolia - San Jose CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1434
  • US Classification:
    20419217, 20419212, 20419215, 20429819, 2042982, 438680, 438687
  • Abstract:
    A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
  • Multi-Step Process For Depositing Copper Seed Layer In A Via

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  • US Patent:
    6893541, May 17, 2005
  • Filed:
    Dec 20, 2002
  • Appl. No.:
    10/326496
  • Inventors:
    Tony P. Chiang - San Jose CA,
    Yu D. Cong - Sunnyvale CA,
    Peijun Ding - San Jose CA,
    Jianming Fu - San Jose CA,
    Howard H. Tang - San Jose CA,
    Anish Tolia - San Jose CA,
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C014/34
  • US Classification:
    20419217, 20419215, 438685, 438687, 205186
  • Abstract:
    A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
  • Chemical Vapor Deposition Hot-Trap For Unreacted Precursor Conversion And Effluent Removal

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  • US Patent:
    6099649, Aug 8, 2000
  • Filed:
    Dec 23, 1997
  • Appl. No.:
    8/996735
  • Inventors:
    John Vincent Schmitt - Sunnyvale CA
    Ling Chen - Sunnyvale CA
    George Michael Bleyle - Fremont CA
    Yu Cong - Sunnyvale CA
    Alfred Mak - Union City CA
    Mei Chang - Saratoga CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 1600
  • US Classification:
    118715
  • Abstract:
    A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

Wikipedia

Yu Cg

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Yu Cong () (died 881), courtesy name Liyong (), was an official of the Chinese dynasty Tang Dynasty, serving as a chancellor during the reign of his ...

Yu Cg Eng v. Trinidad

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In the legal case of Yu Cong Eng v. Trinidad, the Supreme Court of the United States decided that a law passed by the U.S. colonial government of the Philippines in ...

Wikipedia References

Yu Cong Photo 1

Yu Cong

Work:
Position:

Governor • Chancellor

Education:
Specialty:

Director

Skills & Activities:
Master status:

Empress • Prince


Preference:

Associate • Bandit

Resumes

Yu Cong Photo 2

Battelle (Nih/ Niaid/Irf)

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Position:
Researcher at Battelle (NIH/ NIAID)
Location:
Frederick, Maryland
Industry:
Higher Education
Work:
Battelle (NIH/ NIAID) - Fort Detrick, MD since Apr 2012
Researcher

Laboratory of Method Development, Division of Viral Products (DVP), Center for Drug Evaluation and R - Bethesda, MD Dec 2010 - Apr 2012
ORISE Fellow

Department of Biology, College of Science, University of Texas at San Antonio, San Antonio, TX - San Antonio, TX Oct 2003 - 2010
POSTDOCTORAL FELLOW

Division of Viral Hepatitis, Institute for Viral Disease Control & Prevention (IVDC), China CDC, Bei - Beijing, China Oct 1995 - Sep 2003
RESEARCH ASSOCIATE, RESEARCH ASSISTANT PROFESSOR
Education:
Liaoning Medical College at Jinzhou
Peking Union Medical College (PUMC)
Yu Cong Photo 3

Yu Cong

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Yu Cong Photo 4

Yu Cong

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Youtube

my favorite patient ever

this is zhao yu cong, #123, the 5 year old patient that played this bi...

  • Category:
    Travel & Events
  • Uploaded:
    01 Sep, 2007
  • Duration:
    2m 47s

Cong Yu, MD, Pain Medicine Specialist, Swedis...

Dr. Cong Yu is a board-certified pain specialist at Swedish Medical Ce...

  • Category:
    Science & Technology
  • Uploaded:
    16 Feb, 2011
  • Duration:
    1m 33s

Cong Yu

A personal documentary about a young woman's journey from China to Ame...

  • Category:
    People & Blogs
  • Uploaded:
    21 Sep, 2010
  • Duration:
    3m 27s

Facebook

Yu Cong Photo 5

Yu Cong

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Myspace

Yu Cong Photo 6

yu cong

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Locality:
, China
Gender:
Male
Birthday:
1937
Yu Cong Photo 7

Yu Cong

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Locality:
MONTEREYPARK, California
Gender:
Female
Birthday:
1945
Yu Cong Photo 8

Yu Cong

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Gender:
Male
Birthday:
1950

Flickr

Googleplus

Yu Cong Photo 17

Yu Cong


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