Yu J Jin

US Patent:

20130130405, May 23, 2013

Filed:

Oct 24, 2012

Appl. No.:

13/659555

Inventors:

Steven VERHAVERBEKE - San Francisco CA, US
Roman GOUK - San Jose CA, US
Li-Qun XIA - Cupertino CA, US
Mei-yee SHEK - Palo Alto CA, US
Yu JIN - Santa Clara CA, US

International Classification:

H01L 21/02

US Classification:

438 3, 118720, 257E21002

Abstract:

Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

US Patent:

55325386, Jul 2, 1996

Filed:

Oct 28, 1994

Appl. No.:

8/331182

Inventors:

Yu Jin - Chicago IL
Shrinivas G. Joshi - Brookfield WI

International Classification:

H01L 4108

US Classification:

310313R

Abstract:

A new type of acoustic wave which is nearly polarized in the shear horizontal direction, and which can propagate in thin elastic plates if the ratio h/. lambda. is less than about 3 where h is the plate thickness and. lambda. is the acoustic wavelength. Attractive properties of this quasi-SH wave include: (i) nearly nondispersive propagation, (ii) very large value of K. sup. 2, the electromechanical coupling coefficient, and (iii) ability to propagate in contact with a liquid medium without suffering excessive attenuation. The nondispersive propagation and large value of K. sup. 2 makes the wave attractive for use in signal processing and sensing devices. Further, the fact that the wave can propagate in contact with a liquid medium allows the wave to be used in sensors that have to operate in contact with a liquid medium.

US Patent:

20160013049, Jan 14, 2016

Filed:

Feb 18, 2014

Appl. No.:

14/770641

Inventors:

- Santa Clara CA, US
Mei-yee SHEK - Palo Alto CA, US
Mihaela BALSEANU - Cupertino CA, US
Xiaojun ZHANG - Fremont CA, US
Xiaolan BA - San Jose CA, US
Yu JIN - Santa Clara CA, US
Li-Qun XIA - Cupertino CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/02

Abstract:

Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

US Patent:

20140273438, Sep 18, 2014

Filed:

Feb 13, 2014

Appl. No.:

14/180054

Inventors:

- Santa Clara CA, US
Mei-yee Shek - Palo Alto CA, US
Mihaela Balseanu - Sunnyvale CA, US
Xiaojun Zhang - Santa Clara CA, US
Xiaolan Ba - San Jose CA, US
Yu Jin - Santa Clara CA, US
Li-Qun Xia - Cupertino CA, US

International Classification:

H01L 21/768

US Classification:

438653

Abstract:

Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.