Yu Chao Yang

US Patent:

20110227131, Sep 22, 2011

Filed:

Mar 16, 2011

Appl. No.:

13/049551

Inventors:

Zhibo Zhao - Novi MI, US
Dale Roberts - Temperance MI, US
Yu Yang - Perrysburg OH, US
Douglas Dauson - Perrysburg OH, US

International Classification:

H01L 31/18
H01L 31/109

US Classification:

257184, 438 95, 257E31067

Abstract:

A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C. to crystallize the cadmium stannate.

US Patent:

20120060923, Mar 15, 2012

Filed:

Mar 30, 2011

Appl. No.:

13/075998

Inventors:

Zhibo Zhao - Novi MI, US
Yu Yang - Perrysburg OH, US
Benyamin Buller - Perrysburg OH, US
Keith J. Burrows - Mineral Point WI, US
Annette Krisko - Spring Green WI, US

International Classification:

H01L 31/0264
H01L 31/18

US Classification:

136260, 136252, 438 98, 257E31126

Abstract:

A structure including a barrier layer adjacent to a substrate, a transparent conductive oxide layer adjacent to the barrier layer, and a buffer layer adjacent to the transparent conductive oxide layer. In the structure, the barrier layer includes a silicon aluminum oxide, the transparent conductive oxide layer includes cadmium and tin and the buffer layer comprises tin oxide. A photovoltaic device that includes the described structure along with a semiconductor window layer adjacent to the buffer layer and a semiconductor absorber layer adjacent to the semiconductor window layer. Methods of manufacturing a photovoltaic structure are also disclosed, as well as a sputter target for use in the manufacture of a photovoltaic device and methods of manufacturing the same.

US Patent:

20170205531, Jul 20, 2017

Filed:

Apr 30, 2015

Appl. No.:

15/306687

Inventors:

- Sugar Land TX, US
Yu Yang - Canonsburg PA, US
Jean Desroches - La Defense, FR

International Classification:

G01V 11/00
E21B 47/00
E21B 7/04
E21B 43/25
E21B 49/00

Abstract:

A method can include receiving a geomechanical model associated with a geologic environment that includes a borehole where the geomechanical model includes a vertical dimension and lateral dimensions and where the borehole includes a lateral extent that spans a lateral distance in the geologic environment; conditioning the geomechanical model to provide a conditioned geomechanical model that includes representations of structural features based at least in part on borehole-wall image data of at least a portion of the lateral extent of the borehole; and determining a stress field for at least a portion of the geologic environment using the conditioned geomechanical model. The step of conditioning the geomechanical model can optionally include conditioning the geomechanical model to provide a conditioned geomechanical model that comprises representations of structural features based at least in part on sub-surface tool data of a substantially lateral extent of the geologic environment.