Dr. Li graduated from the Sun Yat Sen Univ of Med Sci, Guangzhou, China (242 21 Pr 1/71) in 1987. She works in Flushing, NY and specializes in Internal Medicine. Dr. Li is affiliated with Flushing Hospital Medical Center and Queens Hospital Center.
Deloitte Consulting LLP Atlanta, GA May 2012 to Aug 2012 Summer AssociateUniversity of Tennessee Knoxville, TN Jan 2010 to Jun 2011 Post-doctoral Research AssociateSouthern Alliance for Clean Energy Knoxville, TN Jun 2009 to Dec 2009 Solar Technology Outreach AssociateToppan Photomasks Inc Round Rock, TX Dec 2006 to Feb 2009 Process Engineer
Education:
University of Texas at Austin Austin, TX Dec 2006 PhD in Materials Science & EngineeringPeking University Jul 2001 BS in ChemistryUniversity of Tennessee Knoxville, TN MBA in Supply Chain Management
Skills:
Supply Chain Management, Transportation Management, Process Improvement, Data Analytics, Modeling, and Strategic Consulting
A semiconductor package includes a chip carrier to receive a semiconductor with a dimension generally greater than 22 mm. The chip carrier has a first coefficient of thermal expansion that is larger than the coefficient of thermal expansion of the semiconductor. A heat spreader having parallel channels on opposite sides is attached to the chip carrier along the channels. The heat spreader has a second coefficient of thermal expansion that is smaller than or equal to the coefficient of thermal expansion of the chip carrier. The interplay between the heat spreader and the chip carrier can effectively reduce package warpage and maintain coplanarity within the specification.
Structure And Material For Assembling A Low-K Si Die To Achieve A Low Warpage And Industrial Grade Reliability Flip Chip Package With Organic Substrate
Wen-Chou Vincent Wang - Cupertino CA, US Donald S. Fritz - San Jose CA, US Yuan Li - Sunnyvale CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L023/10
US Classification:
257706, 257701, 257783, 257775
Abstract:
Provided are a semiconductor low-K Si die flip chip package with warpage control and fabrication methods for such packages. The packages include heat spreaders that are attached to the low-K Si die and packaging substrate. In general, the modulus of the thermal interface material, which is used to attach the heat spreader to the low-K Si die, is selected as high as possible relative to other commercially available thermal interface materials. On the other hand, the modulus of the adhesive, which is used to attach the heat spreader via an optional stiffener to the substrate, is selected as low as possible relative to other commercially available adhesives. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the surface to which it is ultimately bound. Moreover, the low-K Si die and package reliabilities are thereby enhanced.
Don Fritz - San Jose CA, US Wen-chou Vincent Wang - Cupertino CA, US Yuan Li - Sunnyvale CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L021/44 H01L021/48 H01L021/50
US Classification:
438106, 438107, 438108, 438125
Abstract:
Provided are a semiconductor flip chip package with warpage control and fabrication methods for such packages. The packages of the present invention include heat spreader lids that are rigidly attached to the die or packaging substrate with a bond that can withstand the considerable bowing pressures caused by the CTE mismatch between the die and substrate. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the PCB board to which it is ultimately bound. Package reliability is thereby also enhanced, particularly for large die sizes.
Low Stress And Warpage Laminate Flip Chip Bga Package
Provided are a semiconductor die flip chip package with warpage control and fabrication methods for such packages. The packages include heat spreaders that are attached to the die and packaging substrate. In general, the modulus of the adhesive, which is used to attach the heat spreader to the substrate, is selected to provide a relatively “soft” connection. The result is a package with less bowing and so improved co-planarity (e. g. , in compliance with industry specifications) with the surface to which it is ultimately bound. Moreover, the die and package reliabilities are thereby enhanced.
Structure And Material For Assembling A Low-K Si Die To Achieve A Low Warpage And Industrial Grade Reliability Flip Chip Package With Organic Substrate
Wen-Chou Vincent Wang - Cupertino CA, US Donald S. Fritz - San Jose CA, US Yuan Li - Sunnyvale CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01I 21/44
US Classification:
438106, 257E23001
Abstract:
Provided are a semiconductor low-K Si die flip chip package with warpage control and fabrication methods for such packages. The packages include heat spreaders that are attached to the low-K Si die and packaging substrate. In general, the modulus of the thermal interface material, which is used to attach the heat spreader to the low-K Si die, is selected as high as possible relative to other commercially available thermal interface materials. On the other hand, the modulus of the adhesive, which is used to attach the heat spreader via an optional stiffener to the substrate, is selected as low as possible relative to other commercially available adhesives. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the surface to which it is ultimately bound. Moreover, the low-K Si die and package reliabilities are thereby enhanced.
A semiconductor package includes a chip carrier to receive a semiconductor with a dimension generally greater than 22 mm. The chip carrier has a first coefficient of thermal expansion that is larger than the coefficient of thermal expansion of the semiconductor. A heat spreader having parallel channels on opposite sides is attached to the chip carrier along the channels. The heat spreader has a second coefficient of thermal expansion that is smaller than or equal to the coefficient of thermal expansion of the chip carrier. The interplay between the heat spreader and the chip carrier can effectively reduce package warpage and maintain coplanarity within the specification.
Structure, Material, And Design For Assembling A Low-K Si Die To Achieve An Industrial Grade Reliability Wire Bonding Package
Wen-chou Vincent Wang - Cupertino CA, US Yuan Li - Sunnyvale CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L 29/40 H01L 23/28 H01L 23/29
US Classification:
257790, 257643, 257787, 257656, 257727, 257734
Abstract:
Provided are semiconductor low-K Si die wire bonding packages with package stress control and fabrication methods for such packages. The packages include molding interface material applied onto the low-K Si die. In general, the molding interface material is selectively applied onto the low-K Si die surface in order to minimize to safe levels the package stress experienced by the low-K Si die. Selective application includes defining various combinatorial patterns of coated and non-coated regions. In addition, selective application may also include a general application of molding interface material to create a stress buffer zone. The results are packages with less stress experienced by the low-K Si die and so improved reliability (in compliance with industry specifications).
Pad Structures To Improve Board-Level Reliability Of Solder-On-Pad Bga Structures
The present invention is directed to a new bonding pad structure having a rugged contact interface that makes it more difficult for a crack to grow from the peripheral edge of the bonding pad. The rugged contact interface also helps to accumulate more solder paste on the edge of the bonding pad, increase the thickness of the solder layer near the pad edge and prevent the pad edge from being oxidized and turning into a crack initiation point.