Yun Jung Lee

US Patent:

20120280650, Nov 8, 2012

Filed:

Jan 25, 2012

Appl. No.:

13/357879

Inventors:

Dukhyun Kim - Marietta GA, US
Yun Ho Lee - Alpharetta GA, US
Youngsik Hur - Alpharetta GA, US

Assignee:

Samsung Electro-Mechanics Company, Ltd. - Gyunggi-Do

International Classification:

H02J 7/00

US Classification:

320108, 320137

Abstract:

Systems and methods pertaining to wireless power transfer are disclosed. In one implementation, a system includes a wireless charger that is used to charge at least one wirelessly chargeable device. The wireless charger includes a master communication system and at least one wireless power charge transmitter, while the wirelessly chargeable device includes a slave wireless communication system configured at least in part, for communicating with the master wireless communication system in order to execute a wireless power charging operation. The wirelessly chargeable device further includes a wireless power charge receiver configured to receive a wireless power charge from the wireless power charge transmitter contained in the wireless charger.

US Patent:

20120290470, Nov 15, 2012

Filed:

Feb 28, 2012

Appl. No.:

13/406685

Inventors:

Yun Ho Lee - Alpharetta GA, US
Dukhyun Kim - Marietta GA, US
Youngsik Hur - Alpharetta GA, US

Assignee:

Samsung Electro-Mechanics Company, Ltd. - Gyunggi-Do

International Classification:

G06Q 20/22
H04B 5/00

US Classification:

705 39

Abstract:

Payment systems and methods for providing a wireless power charge are disclosed. In one exemplary implementation, a system includes a wireless charger that is used to provide a power charge to a wirelessly chargeable device. Prior to providing the power charge to the wirelessly chargeable device, the wireless charger obtains payment-related information from the wirelessly chargeable device using near field communications (NFC), and transmits this payment-related information to a payment center via a network such as the Internet. The payment center uses the information to either deny or authorize the power charge operation. If authorized, an authorization indication is provided to the wireless charger via the network, and the wireless charger then wirelessly transmits a suitable power charge to the wirelessly chargeable device.

US Patent:

20120326658, Dec 27, 2012

Filed:

Mar 30, 2012

Appl. No.:

13/435568

Inventors:

Dukhyun Kim - Marietta GA, US
Yun Ho Lee - Alpharetta GA, US
Youngsik Hur - Alpharetta GA, US

Assignee:

Samsung Electro-Mechanics Company, Ltd. - Gyunggi-Do

International Classification:

H02J 7/00

US Classification:

320108, 320155

Abstract:

Systems and methods pertaining to wireless power transfer are disclosed. Specifically, disclosed herein are calibration procedures that incorporate transmission of a reference power charge from a wireless power charger to permit determination of an optimized receiver circuitry configuration in one or more wirelessly chargeable devices. The result of the calibration procedures may then be used by the wireless charger to assign various frequencies to several wirelessly chargeable devices so as to optimally transfer a steady state power charge at one or more frequencies to the wirelessly chargeable devices.

US Patent:

20130020988, Jan 24, 2013

Filed:

Jul 17, 2012

Appl. No.:

13/550684

Inventors:

Dukhyun Kim - Marietta GA, US
Yun Ho Lee - Alpharetta GA, US
Youngsik Hur - Alpharetta GA, US

Assignee:

Samsung Electro-Mechanics Company, Ltd. - Gyunggi-Do

International Classification:

H02J 7/00

US Classification:

320108

Abstract:

Systems and methods pertaining to multi-frequency wireless power transfer are disclosed. In one exemplary implementation, a wireless charger is used to generate and transmit two wireless power charges at two different frequencies, using a frequency division multiplexed (FDM) format. A wireless sly chargeable device that is inductively coupled to the wireless charger receives the two wireless power charges in the FDM format and uses the two charges to charge one or more chargeable batteries contained in the wirelessly chargeable device.

US Patent:

20200243707, Jul 30, 2020

Filed:

Apr 13, 2020

Appl. No.:

16/847038

Inventors:

- Armonk NY, US
Yun Seog Lee - White Plains NY, US
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

International Classification:

H01L 31/18
H01L 31/0749
H01L 31/0224
H01L 31/0468
H01L 31/0272

Abstract:

Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

US Patent:

20200243784, Jul 30, 2020

Filed:

Apr 13, 2020

Appl. No.:

16/846971

Inventors:

- Armonk NY, US
Yun Seog Lee - White Plains NY, US
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

International Classification:

H01L 51/42
H01L 31/0272

Abstract:

Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.

US Patent:

20190051930, Feb 14, 2019

Filed:

Aug 11, 2017

Appl. No.:

15/675296

Inventors:

- Armonk NY, US
Yun Seog Lee - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

International Classification:

H01M 10/0562
H01M 10/0525
H01M 10/04
H01M 4/131
H01M 4/525
H01M 4/1391
H01M 10/0585
H01M 4/04

Abstract:

A solid-state lithium-based battery having fast charging and recharging speeds (above 3 C) is provided by including a nitrogen-enriched lithiated cathode material surface layer between the lithiated cathode material layer and the lithium-based solid-state electrolyte layer. The nitrogen-enriched lithiated cathode material surface layer can be formed by introducing nitrogen into a lithiated cathode material. The nitrogen can be introduced during the final stage of a deposition process or by utilizing a different process, such as, for example, thermal nitridation, than a deposition process.

US Patent:

20180309075, Oct 25, 2018

Filed:

Apr 25, 2017

Appl. No.:

15/496740

Inventors:

- Armonk NY, US
Guy M. Cohen - Ossining NY, US
Talia S. Gershon - White Plains NY, US
Yun Seog Lee - White Plains NY, US
Ning Li - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

International Classification:

H01L 51/10
H01L 51/05
H01L 51/00
G11C 13/00

Abstract:

Memristive devices based on tunable Schottky barrier are provided. In one aspect, a method of forming a memristive device includes: forming a semiconductor layer on a bottom metal electrode, wherein the semiconductor layer has workfunction-modifying molecules embedded therein; and forming a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer, and wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode. A memristive device and a method for operating a memristive device are also provided.