Zheng Chen
age ~53
from Plano, TX
- Also known as:
-
- Jason Z Chen
- Zhen G Chen
- Chen Zheng
Zheng Chen Phones & Addresses
- Plano, TX
- 3235 Hollycrest Dr, Colorado Spgs, CO 80920
- 1930 La Salle St, Colorado Spgs, CO 80909
- Sunnyvale, CA
- Dallas, TX
- Colton, TX
Work
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Company:Utd scm capstone project for samsung telecommunication america
Education
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School / High School:Guangdong University of Foreign StudiesJul 2013
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Specialities:B.S in Logistics Management
Name / Title
Company / Classification
Phones & Addresses
President
Zephyr Consulting Services Inc
252 Eastridge Dr, San Ramon, CA 94582
1851 Ridgeland Cir 1851 Ridgeland Cir, Danville, CA 94526
1851 Ridgeland Cir 1851 Ridgeland Cir, Danville, CA 94526
President
BLUE ROCK CONSULTING, INC
Business Consulting Services
Business Consulting Services
6 Christensen Ct, Alameda, CA 94502
Director
MACCHE CORPORATION
Nonclassifiable Establishments
Nonclassifiable Establishments
15455 Dallas Pkwy STE 600, Addison, TX 75001
15455 N Dallas Pkwy 600, Addison, TX 75001
15455 N Dallas Pkwy 600, Addison, TX 75001
Director
Autumn Golden Holdings
Holding Company
Holding Company
15455 Dallas Pkwy, Addison, TX 75001
Director
OREADS TECHNOLOGIES INC
1214 Hidden Rdg APT 2058, Irving, TX 75038
212 S Cooper St #119, Arlington, TX 76013
212 S Cooper St #119, Arlington, TX 76013
Us Patents
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Acquisition Scheme For An Electron Portal Imaging System
view source -
US Patent:6341172, Jan 22, 2002
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Filed:Feb 28, 1997
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Appl. No.:08/808600
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Inventors:Ming Xu - San Ramon CA
Zheng Chen - Pleasant Hill CA -
Assignee:Siemens Medical Systems, Inc. - Iselin NJ
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International Classification:G06K 900
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US Classification:382132, 378 95, 382168
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Abstract:An improved acquisition scheme for a medical imaging and treatment system According to one aspect of the invention, adaptive radiation detection, for determining when therapeutic or diagnostic radiation is being applied, is provided. The imaging device acquires several test images during a preacquisition delay. The maximum intensity level from these test images is defined as the upper limit of a camera s response in the darkness. The standard deviation of the intensity distribution is also computed. The image intensity level of the subsequent test images are compared to a radiation detection threshold which is determined to be the upper limit of the cameras dark signal, plus twice the standard deviation of pixel intensity distribution of the dark test images. If the intensities of a statistically significant number of pixels exceeds the threshold, the radiation is considered to be on. According to another aspect of the invention, a single look-up table is used for both the test images and the actual acquisition images.
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Ferroelectric Memory And Method Of Operating Same
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US Patent:6370056, Apr 9, 2002
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Filed:Mar 10, 2000
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Appl. No.:09/523492
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Inventors:Zheng Chen - Colorado Springs CO
Vikram Joshi - Colorado Springs CO
Myoungho Lim - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO -
Assignee:Symetrix Corporation - Colorado Springs CO
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International Classification:G11C 1122
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US Classification:365145, 36518508
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Abstract:A ferroelectric non-volatile memory comprising: a plurality of memory cells, each containing an FeFET and a MOSFET, each of said FeFETs having a source, a drain, a substrate, and a gate, and each MOSFET having a pair of source/drains and a gate. The cells are arranged in an array comprising a plurality of rows and a plurality of columns. A gate line and a bit line are associated with each column, and a word line, a drain line, and a substrate line are associated with each row. One source/drain of each MOSFET is connected to its corresponding gate line; the other source/drain is connected to the gate of the FeFET in the cell. The gate of the MOSFET is connected to its corresponding word line which provides a write and erase enable signal. The drain of the FeFET is connected to its corresponding drain line, and the source of the FeFET is connected to its corresponding bit line. The substrate of each FeFET is connected to its corresponding substrate line.
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Ferroelectric Memory And Method Of Operating Same
view source -
US Patent:6373743, Apr 16, 2002
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Filed:Aug 30, 1999
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Appl. No.:09/385308
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Inventors:Zheng Chen - Colorado Springs CO
Myoungho Lim - Colorado Springs CO
Vikram Joshi - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO -
Assignee:Symetrix Corporation - Colorado Springs CO
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International Classification:G11C 1122
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US Classification:365145, 365149
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Abstract:A ferroelectric non-volatile memory comprising: a plurality of memory cells each containing a ferroelectric FET, each of said ferroelectric FETs having a source, a drain, a substrate, and a gate. The FETs are arranged in an array comprising a plurality of rows and a plurality of columns. There are a plurality of row select lines, each associated with one of the rows of said ferroelectric FETs, and a plurality of column select lines, each associated with one of the columns of ferroelectric FETs. Each of the sources is directly electrically connected to its associated row select line, and each of the drains is directly electrically connected to its associated column select line. The source and substrate of each FET are also directly electrically connected. A memory cell is read by connecting its row select line to ground, and its column select line to a small voltage. All the gates, and the row select lines of non-selected cells are open or connected to a high resistance source.
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Ferroelectric Memory And Method Of Operating Same
view source -
US Patent:6924997, Aug 2, 2005
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Filed:Sep 25, 2001
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Appl. No.:10/381235
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Inventors:Zheng Chen - Colorado Springs CO, US
Vikram Joshi - Colorado Springs CO, US
Myoungho Lim - Colorado Springs CO, US
Carlos A. Paz de Araujo - Colorado Springs CO, US
Larry D. McMillan - Colorado Springs CO, US
Yoshihisa Kato - Shiga, JP
Tatsuo Otsuki - Osaka, JP
Yasuhiro Shimada - Kyoto, JP -
Assignee:Symetrix Corporation - Colorado Springs CO
Matsushita Electric Industrial Co., Ltd. - Osaka -
International Classification:G11C011/22
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US Classification:365145, 36518901
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Abstract:A ferroelectric memory includes a group of memory cells (), each cell having a ferroelectric memory element (etc. ), a drive line (etc. ) on which a voltage for writing information to the group of memory cells is placed, a bit line (etc. ) on which information to be read out of the group of memory cells is placed, a preamplifier (etc. ) between the memory cells and the bit line, a set switch (etc. ) connected between the drive line and the memory cells, and a reset switch (etc. ) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.
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Non-Volatile Ferroelectric Sram
view source -
US Patent:6996000, Feb 7, 2006
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Filed:Oct 7, 2004
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Appl. No.:10/961429
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Inventors:Zheng Chen - Colorado Springs CO, US
Carlos A. Paz de Araujo - Colorado Springs CO, US
Larry D. McMillan - Colorado Springs CO, US -
Assignee:Symetrix Corporation - Colorado Springs CO
Matsushita Electric Industrial Co., Ltd. - Osaka -
International Classification:G11C 7/00
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US Classification:365154, 365145
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Abstract:A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.
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Infrared Sensor And Imager With Differential Ferroelectric Cells
view source -
US Patent:7038206, May 2, 2006
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Filed:Oct 6, 2004
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Appl. No.:10/960876
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Inventors:Zheng Chen - Colorado Springs CO, US
Carlos A. Paz de Araujo - Colorado Springs CO, US
Jolanta Celinska - Colorado Springs CO, US
Larry D. McMillan - Colorado Springs CO, US -
Assignee:Symetrix Corporation - Colorado Springs CO
Matsushita Electric Industrial Co., Ltd. - Osaka -
International Classification:G01J 5/02
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US Classification:2503382
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Abstract:A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
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Non-Destructive Readout Of Ferroelectric Memories
view source -
US Patent:7154768, Dec 26, 2006
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Filed:Jan 6, 2005
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Appl. No.:11/030277
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Inventors:Zheng Chen - Colorado Springs CO, US
Carlos A. Paz de Araujo - Colorado Springs CO, US
Larry D. McMillan - Colorado Springs CO, US -
Assignee:Symetrix Corporation - Colorado Springs CO
Matushita Electric Industrial Co., Ltd - Osaka -
International Classification:G11C 11/22
G11C 7/00 -
US Classification:365145, 36518519, 36518909, 365207
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Abstract:A device and method of reading a ferroelectric memory, including providing a ferroelectric memory including a ferroelectric memory cell, a charge integrator, and a bit line connecting the ferroelectric memory cell and the charge integrator. Pulses are applied to the ferroelectric memory cell, where each of the pulses are of a value lower than that which will destroy data stored in the memory cell. Output voltage values from the ferroelectric memory cell are accumulated by the charge integrator in response to each pulse. The output of the charge integrator may be read to determine whether the datum value stored in the memory cell is a logic high or low value. In one embodiment, the output of the charge integrator is read at a predetermined time after starting the pulses.
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1T1R Resistive Memory Array With Chained Structure
view source -
US Patent:7298640, Nov 20, 2007
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Filed:May 3, 2005
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Appl. No.:11/121145
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Inventors:Zheng Chen - Colorado Springs CO, US
Carlos A. Paz de Araujo - Colorado Springs CO, US
Larry D. McMillan - Colorado Springs CO, US -
Assignee:Symetrix Corporation - Colorado Springs CO
Matsushita Electric Industrial Co., Ltd. - Osaka -
International Classification:G11C 11/00
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US Classification:365148, 365100, 365104, 36518904
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Abstract:A 1T1R resistive memory array comprised of chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such chains of memory cells are non-volatile and provide for each of the memory cells to be randomly accessed.
License Records
Zheng Chen
License #:
38724 - Expired
Category:
Professional
Issued Date:
Jan 2, 2003
Expiration Date:
Mar 31, 2015
Resumes
Zheng Chen
view sourceLocation:
11350 Old Roswell Rd, Alpharetta, GA 30009
Industry:
Information Technology And Services
Work:
Ericsson
Oss
Oss
Executive Vice President
view sourceIndustry:
Consumer Electronics
Work:
Yuhuatel
Executive Vice President
Executive Vice President
Education:
Beijing University of Posts and Telecommunications 1979 - 1986
Zheng Chen
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Zheng Chen
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Zheng W Chen
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Zheng Wei Chen
view sourceAmazon
The Way of Chinese Characters: The Origins of 400 Essential Words
view sourceFor non-native speakers of Chinese, learning to write Chinese can be one of the most challenging aspects of the language; learners are often asked to memorize characters by simply writing them over and over again, without a basic understanding of their meanings.The Way of Chinese Characters offers a...
Author
Jian-Hsin Wu
Binding
Paperback
Pages
294
Publisher
Cheng & Tsui
ISBN #
0887275273
EAN Code
9780887275272
ISBN #
7
The Way of Chinese Characters, 2nd Edition (Chinese Edition)
view sourceEnrich character study with cultural insight and linguistic context The Way of Chinese Characters: The Origins of 670 Essential Words offers a holistic approach to character learning. Firmly grounded in etymological research, it introduces each character with its historical evolution and cultural co...
Author
Jianhsin Wu
Binding
Paperback
Publisher
Cheng & Tsui
ISBN #
162291046X
EAN Code
9781622910465
ISBN #
4
The Way of Chinese Characters: The Origins of 450 Essential Words
view sourceFor non-native speakers of Chinese, learning to write Chinese characters can be one of the most challenging aspects of the language. Learners are often asked to memorize characters by simply writing them over and over again, without a basic understanding of their meanings. The Way of Chinese Charact...
Author
Jianhsin Wu
Binding
Paperback
Pages
330
Publisher
Cheng & Tsui
ISBN #
0887277608
EAN Code
9780887277603
ISBN #
2
Records of one hundred (Paperback)
view sourceAuthor
chen zheng hong
Binding
Paperback
Publisher
Unknown
ISBN #
7309056620
EAN Code
9787309056624
ISBN #
10
Intensive Records (Paperback)
view sourceAuthor
chen zheng hong
Binding
Paperback
Publisher
Unknown
ISBN #
7309047672
EAN Code
9787309047677
ISBN #
8
The Chen-style Taijiquan for Life Enhancement
view sourceAuthor
Chen Zheng Lei, Xu Hailiang
Binding
Paperback
Pages
149
Publisher
Tai Chi Centre
ISBN #
7534821819
EAN Code
9787534821813
ISBN #
3
Chen-Style Tai Chi Sword (Chinese Edition)
view sourceAuthor
Chen Zheng Lei
Binding
Paperback
Pages
199
Publisher
Zhongzhou ancient books publishing house
ISBN #
7534832004
EAN Code
9787534832000
ISBN #
1
Flickr
Myspace
Googleplus
Zheng Chen
Work:
Microsoft Research Asia
Education:
Tsinghua University
Zheng Chen
Zheng Chen
Zheng Chen
Zheng Chen
Zheng Chen
Zheng Chen
Zheng Chen
News
Next-Gen Soft Exoskeleton Boosts Mobility for Kids With Cerebral Palsy
view source- the University of Houston: costume design and technology (Paige A. Willson), industrial design (Elham Morshedzadeh and Jeff Feng), mechanical engineering (Francisco C. Robles Hernandez, and Zheng Chen) and electrical engineering students (Shantanu Sarkar, Aime J. Aguilar-Herrera, and Lara Altaweel).
- Date: Apr 30, 2025
- Category: Health
- Source: Google
Stanford Scientists Develop Safer Battery Material
view source- In a paper published online Jan. 11 in Nature, Stanford researchers Zheng Chen, Po-Chun Hsu, Jeffrey Lopez, Yuzhang Li, John W. F. To, Nan Liu, Chao Wang, Sean C. Andrews, Jia Liu, Yi Cui, and Zhenan Bao describe the creation of a reversible thermoresponsive polymer than can shut down a battery that
- Date: Jan 13, 2016
- Category: Sci/Tech
- Source: Google
Stanford researchers unveil technology that could prevent battery fires
view source- After attaching a film to one of the battery electrodes in order to allow electric current flow, Zheng Chen, lead author of the study, said, "To conduct electricity, the spiky particles have to physically touch one another. But during thermal expansion, polyethylene stretches. That causes the partic
- Date: Jan 12, 2016
- Category: Sci/Tech
- Source: Google
New Lithium-Ion Battery Won't Overheat And Catch Fire
view source- The battery can shut itself when the temperature gets too high and then powers itself on after it has cooled enough. Zheng Chen, from Stanford University, and colleagues, who developed the battery, said that the new technology can help prevent fires in electronics caused by overheated power supply.
- Date: Jan 12, 2016
- Category: Sci/Tech
- Source: Google
New Nanoparticle Battery Shuts Down Before Overheating
view source- Stanford engineering professor Yi Cui, Bao and postdoctoral scholar Zheng Chen turned to nanotechnology to try and solve the problem. Of note, Bao has invented a wearable sensor to monitor human body temperature. The sensor comprises a plastic material embedded with very small particles of nickel w
- Date: Jan 12, 2016
- Category: Sci/Tech
- Source: Google
Researchers create battery that self-regulates according to temperature
view source- In order to address this problem, Stanford professor of engineering Zhenan Bao, Stanford engineer Yi Cui and postdoctoral scholar Zheng Chen used tiny nickel particles coated with graphene and embedded in a film of elastic polyethylene. When in contact with one another, these particles conduct elect
- Date: Jan 12, 2016
- Category: Sci/Tech
- Source: Google
Stanford scientists build battery that won't overheat
view source- "We attached the polyethylene film to one of the battery electrodes so that an electric current could flow through it," lead study author Zheng Chen, a postdoctoral scholar at Stanford, said in a press release. "To conduct electricity, the spiky particles have to physically touch one another. But du
- Date: Jan 11, 2016
- Category: Sci/Tech
- Source: Google
Youtube
Chen Teck Zheng
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Zheng Wei Chen
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Lim Zheng Chen
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Zheng Yu Chen
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Teck Zheng Chen
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Zheng Chen
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Zheng Chen
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Arlvin Zheng Chen
view sourceClassmates
Zheng Chen
view sourceSchools:
Capen School Dedham MA 1991-1995
Community:
Karen Decoste, Paul Tyner
Zheng Chen
view sourceSchools:
Yangjing Middle School Shanghai China 1991-1995
Community:
Yu Min, Tian Jie, Haitao Wang, Shan Xin, Qingfeng Tan, Ye Bing
Guo Zheng Chen | Palm Val...
view source
Caoyang High School, Shan...
view sourceGraduates:
Zheng Chen (1991-1995)
Yangjing Middle School, S...
view sourceGraduates:
Caifei Zhang (1980-1984),
Jia Chen (1992-1996),
Bingrong Lin (1986-1990),
Zheng Chen (1991-1995),
Nan Chen (1967-1971)
Jia Chen (1992-1996),
Bingrong Lin (1986-1990),
Zheng Chen (1991-1995),
Nan Chen (1967-1971)
Dalian No. 8 High School,...
view sourceGraduates:
Chen Zheng (1993-1997),
Ding Hong (1995-1999),
Jun Cheng (1989-1993),
Hang Jiang (1996-2000),
Liming Chen (1990-1994)
Ding Hong (1995-1999),
Jun Cheng (1989-1993),
Hang Jiang (1996-2000),
Liming Chen (1990-1994)
Get Report for Zheng Chen from Plano, TX, age ~53