Zu-Jean Tien

US Patent:

53744810, Dec 20, 1994

Filed:

Aug 5, 1993

Appl. No.:

8/102399

Inventors:

Shwu Jen Jeng - Fishkill NY
Jerzy Kanicki - Katonah NY
David E. Kotecki - Hopewell Junction NY
Christopher C. Parks - Beacon NY
Zu-Jean Tien - Saratoga CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2972

US Classification:

428336

Abstract:

A polyemitter structure having a thin interfacial layer deposited between the polysilicon emitter contact and the crystalline silicon emitter, as opposed to a regrown SiO. sub. x layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact.

US Patent:

52665046, Nov 30, 1993

Filed:

Mar 26, 1992

Appl. No.:

7/857862

Inventors:

Jeffrey L. Blouse - Stanfordville NY
Jack O. Chu - Long Island NY
Brian Cunningham - Highland NY
Jeffrey P. Gambino - Gaylordsville CT
Louis L. Hsu - Fishkill NY
David E. Kotecki - Hopewell Junction NY
Seshadri Subbanna - Hopewell Junction NY
Zu-Jean Tien - Saratoga CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21365

US Classification:

437 31

Abstract:

A method of manufacturing a bipolar transistor by use of low temperature emitter process is disclosed. After completion of the usual base and collector formation in a vertical bipolar transistor, an emitter opening is etched in the insulator layer over the base layer at selected locations. A thin layer (less than 500. ANG. ) of in-situ doped amorphous silicon is deposited over the substrate and heated to densify for 30 to 60 minutes at about 650. degree. C. Subsequently an in-situ doped polysilicon layer of 100 to 200 nm is deposited over the amorphous Si film preferably at about 600. degree. C. Subsequently the layers are heated below 600. degree. C. for several hours to convert partially the amorphous Si into a monocrystalline emitter layer over the base regions.