Adam F Halverson

US Patent:

20120132277, May 31, 2012

Filed:

Nov 30, 2010

Appl. No.:

12/956811

Inventors:

Oleg Sulima - Ballston Lake NY, US
Loucas Tsakalakos - Niskayuna NY, US
Alok Mani Srivastava - Niskayuna NY, US
Adam Fraser Halverson - Albany NY, US

Assignee:

GENERAL ELECTRIC COMPANY - Schenectady NY

International Classification:

H01L 31/0232

US Classification:

136257, 136259

Abstract:

An article, such as a solar cell or module, is presented. In one embodiment, the article includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a reflective material configured to scatter at least 50% of light incident on the filler material. Another embodiment is an article that includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a wavelength converting material. Other embodiments are described herein in which the filler material described above and disposed in the inactive region includes both the reflective material and the wavelength converting material.

US Patent:

20230045333, Feb 9, 2023

Filed:

Oct 10, 2022

Appl. No.:

17/963061

Inventors:

- Tempe AZ, US
Holly Ann Blaydes - Perrysburg OH, US
Jongwoo Choi - Boise ID, US
Adam Fraser Halverson - Albany NY, US
Eugene Thomas Hinners - Gansevoort NY, US
William Hullinger Huber - Ottawa Hills OH, US
Yong Liang - Niskayuna NY, US
Joseph John Shiang - Niskayuna NY, US

Assignee:

First Solar, Inc. - Tempe AZ

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0296
H01L 31/065
H01L 31/073

Abstract:

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

US Patent:

20210399159, Dec 23, 2021

Filed:

Sep 3, 2021

Appl. No.:

17/466708

Inventors:

- Tempe AZ, US
Holly Ann Blaydes - Perrysburg OH, US
Jongwoo Choi - Boise ID, US
Adam Fraser Halverson - Albany NY, US
Eugene Thomas Hinners - Gansevoort NY, US
William Hullinger Huber - Ottawa Hills OH, US
Yong Liang - Niskayuna NY, US
Joseph John Shiang - Niskayuna NY, US

Assignee:

First Solar, Inc. - Tempe AZ

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0296
H01L 31/073
H01L 31/065

Abstract:

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

US Patent:

20200350459, Nov 5, 2020

Filed:

Jul 21, 2020

Appl. No.:

16/934726

Inventors:

- Tempe AZ, US
Holly Ann Blaydes - Perrysburg OH, US
Jongwoo Choi - Boise ID, US
Adam Fraser Halverson - Albany NY, US
Eugene Thomas Hinners - Gansevoort NY, US
William Hullinger Huber - Ottawa Hills OH, US
Yong Liang - Niskayuna NY, US
Joseph John Shiang - Niskayuna NY, US

Assignee:

First Solar, Inc. - Tempe AZ

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0296
H01L 31/073
H01L 31/065

Abstract:

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

US Patent:

20200201137, Jun 25, 2020

Filed:

Dec 20, 2018

Appl. No.:

16/228056

Inventors:

- Schenectady NY, US
Adam HALVERSON - Albany NY, US

International Classification:

G02F 1/35
G02F 1/39

Abstract:

A photonic circuit integrated on a silicon-on-insulator waveguide, the silicon-on-insulator waveguide including a guiding layer, a cladding layer, and a substrate layer. The guiding layer having a first surface and a second surface, the second surface abutting one surface of the cladding layer, the cladding layer having another surface in abutment with a surface of the substrate layer, a photon pump in optical communication with the guiding layer, a nonlinear optical material in contact with the guiding layer first surface, a photon beam of the photon pump traversing the silicon-on-insulator waveguide, and the silicon-on-insulator waveguide having an output beam that includes a signal beam and an idler beam.

US Patent:

20190097079, Mar 28, 2019

Filed:

Nov 26, 2018

Appl. No.:

16/200423

Inventors:

- Tempe AZ, US
Kristian William Andreini - Burnt Hills NY, US
William Hullinger Huber - Ottawa Hills OH, US
Eugene Thomas Hinners - Gansevoort NY, US
Joseph John Shiang - Niskayuna NY, US
Yong Liang - Niskayuna NY, US
Jongwoo Choi - Niskayuna NY, US
Adam Fraser Halverson - Albany NY, US

Assignee:

First Solar Inc. - Tempe AZ

International Classification:

H01L 31/18
H01L 31/073
H01L 31/065
H01L 31/0224
H01L 31/0296

Abstract:

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

US Patent:

20160163911, Jun 9, 2016

Filed:

Feb 11, 2016

Appl. No.:

15/041814

Inventors:

- Kulim, MY
Jinbo Cao - Rexford NY, US
Adam Fraser Halverson - Niskayuna NY, US
Mark Jeffrey Pavol - Arvada CO, US
Douglas Garth Jensen - Lakewood CO, US

Assignee:

First Solar Malaysia Sdn. Bhd. - Kulim

International Classification:

H01L 31/18

Abstract:

A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

US Patent:

20140373908, Dec 25, 2014

Filed:

Jun 21, 2013

Appl. No.:

13/923644

Inventors:

- Tempe AZ, US
Joseph John Shiang - Niskayuna NY, US
William Hullinger Huber - Niskayuna NY, US
Adam Fraser Halverson - Albany NY, US

Assignee:

First Solar Inc. - Tempe AZ

International Classification:

H01L 31/0272

US Classification:

136256, 136260

Abstract:

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.