Ali R Mirabedini

US Patent:

7558305, Jul 7, 2009

Filed:

Dec 21, 2004

Appl. No.:

11/021095

Inventors:

Dan Botez - Madison WI, US
Ali R. Mirabedini - Madison WI, US
Dapeng P. Xu - Madison WI, US
Luke J. Mawst - Sun Prairie WI, US

Assignee:

Wisconsin Alumni Research Foundation - Madison WI

International Classification:

H01S 5/00

US Classification:

372 4301, 372 4401, 372 4501, 372 45012

Abstract:

A semiconductor laser and light emitting device is defined. The device comprises an electron injector and an active region adjacent to the electron injector. The active region includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.

US Patent:

20040016921, Jan 29, 2004

Filed:

Jan 30, 2001

Appl. No.:

09/772559

Inventors:

Dan Botez - Madison WI, US
Luke Mawst - Sun Prairie WI, US
Ali Mirabedini - Madison WI, US

Assignee:

Wisconsin Alumni Research Foundation

International Classification:

H01L029/06

US Classification:

257/025000

Abstract:

A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.

US Patent:

6229153, May 8, 2001

Filed:

Jun 19, 1997

Appl. No.:

8/879161

Inventors:

Dan Botez - Madison WI
Luke J. Mawst - Sun Prairie WI
Ali R. Mirabedini - Madison WI

Assignee:

Wisconsin Alumni Research Corporation - Madison WI

International Classification:

H01L 2972
H01L 29205

US Classification:

257 25

Abstract:

A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.

US Patent:

20140355121, Dec 4, 2014

Filed:

May 15, 2013

Appl. No.:

13/895062

Inventors:

Sherwyn Alan OAS - Fitchburg WI, US
Ali MIRABEDINI - Madison WI, US

International Classification:

G02B 27/14
G02B 1/10

US Classification:

359583, 427162

Abstract:

Coatings for optical devices, such as beamsplitters, are provided. The coatings include at least one bilayer of a layer of a material having an index of refraction nin contact with a layer of a material having an index of refraction nand an uppermost layer of a material having an index of refraction nover the bilayer, wherein n>n>n. The bilayer(s) can be composed of BaFand KRS5. The uppermost layer can be composed of Ge. Certain coatings provide beamsplitters which exhibit highly efficient emission over broad spectral ranges.