Andrew S Hooper

US Patent:

8476552, Jul 2, 2013

Filed:

Apr 2, 2010

Appl. No.:

12/753659

Inventors:

Bong H. Cho - Beaverton OR, US
Brian L. Pugh - Beaverton OR, US
Andrew Hooper - Beaverton OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

B23K 26/00

US Classification:

21912167, 21912172

Abstract:

Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.

US Patent:

8526473, Sep 3, 2013

Filed:

Mar 31, 2008

Appl. No.:

12/060076

Inventors:

Brian W. Baird - Portland OR, US
Clint R. Vandergiessen - Beaverton OR, US
Steve Swaringen - Rockwall TX, US
Robert Hainsey - Portland OR, US
Yunlong Sun - Beaverton OR, US
Kelly J. Bruland - Portland OR, US
Andrew Hooper - Beaverton OR, US

Assignee:

Electro Scientific Industries - Portland OR

International Classification:

H01L 21/302
H01S 3/10
B23K 26/38

US Classification:

372 25, 438130, 438795, 21912168, 21912169

Abstract:

Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

US Patent:

8598490, Dec 3, 2013

Filed:

Mar 31, 2011

Appl. No.:

13/076810

Inventors:

Andrew Hooper - Portland OR, US
David Barsic - Portland OR, US
Kelly J. Bruland - Portland OR, US
Daragh S. Finn - Beaverton OR, US
Lynn Sheehan - Vancouver WA, US
Xiaoyuan Peng - Portland OR, US
Yasu Osako - Lake Oswego OR, US
Jim Dumestre - Tigard OR, US
William J. Jordens - Beaverton OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

H01L 21/78

US Classification:

21912169, 21912177, 438463, 264400, 264482

Abstract:

Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

US Patent:

20100177794, Jul 15, 2010

Filed:

Jan 15, 2009

Appl. No.:

12/354373

Inventors:

Xiaoyuan Peng - Portland OR, US
Andrew Hooper - Beaverton OR, US

Assignee:

ELECTRO SCIENTIFIC INDUSTRIES, INC. - Portland OR

International Classification:

H01S 3/10

US Classification:

372 25

Abstract:

A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast pulse in a group define a “burst envelope.” In addition to independently controlling the amplitude of each ultrafast pulse within the burst envelope, the system may also provide selective control of spacing between each ultrafast pulse and/or the overall temporal width of the burst envelope. Thus, the system provides selective shaping of the burst envelope for particular laser processing applications.

US Patent:

20110287607, Nov 24, 2011

Filed:

Mar 30, 2011

Appl. No.:

13/076238

Inventors:

Yasu Osako - Lake Oswego OR, US
Bong Cho - Beaverton OR, US
Daragh Finn - Beaverton OR, US
Andrew Hooper - Portland OR, US
James O'Brien - Bend OR, US

Assignee:

ELECTRO SCIENTIFIC INDUSTRIES, INC. - Portland OR

International Classification:

H01L 21/78
B23K 26/00

US Classification:

438462, 21912172, 257E21599

Abstract:

Laser singulation of electronic devices from semiconductor substrates including wafers is performed using up to 3 lasers from 2 wavelength ranges. Using up to 3 lasers from 2 wavelength ranges permits laser singulation of wafers held by die attach film while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers from 2 wavelength ranges permits efficient dicing of semiconductor wafers while avoiding debris and thermal problems associated with laser processing die attach tape.

US Patent:

20120158169, Jun 21, 2012

Filed:

Dec 16, 2010

Appl. No.:

12/970483

Inventors:

Daragh S. Finn - Portland OR, US
Andrew E. Hooper - Portland OR, US
A. Grey Lerner - Portland OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

G06F 19/00

US Classification:

700109

Abstract:

A closed-loop etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. The mass of the material to be removed is calculated, and the silicon workpiece is exposed to the spontaneous etchant to remove the material. The system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.

US Patent:

20120160814, Jun 28, 2012

Filed:

Dec 28, 2010

Appl. No.:

12/980131

Inventors:

Yasu Osako - Lake Oswego OR, US
Kelly J. Bruland - Portland OR, US
Andrew Hooper - Portland OR, US
Jim Dumestre - Tigard OR, US
David Lord - Portland OR, US

Assignee:

ELECTRO SCIENTIFIC INDUSTRIES, INC. - Portland OR

International Classification:

B23K 26/00

US Classification:

21912161

Abstract:

Systems and methods ablate electrically conductive links using laser pulses with optimized temporal power profiles and/or polarizations. In certain embodiments, the polarization property of a laser beam is set such that coupling between the laser beam and an electrically conductive link reduces the pulse energy required to ablate the electrically conductive link. In one such embodiment, the polarization is selected based on a depth of a target link structure. In another embodiment, the polarization changes as deeper material is removed from a target location. In addition, or in other embodiments, a first portion of a temporal power profile of a laser beam includes a rapid rise time to heat an upper portion of an electrically conductive link so as to form cracks in a passivation layer over upper corners of the electrically conductive link, without forming cracks at lower corners of the electrically conductive link.