Bradley E. Patt - Sherman Oaks CA Jan S. Iwanczyk - Los Angeles CA Carolyn R. Tull - Orinda CA Gintas Vilkelis - Westlake Village CA
Assignee:
Photon Imaging, Inc. - Northridge CA
International Classification:
H01L 2714
US Classification:
25037014, 257452
Abstract:
A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.