Rohm and Haas Electronic Materials CMP Holdings, Inc. - Newark DE
International Classification:
B24B 1/00
US Classification:
451 41, 451 36
Abstract:
A method for polishing a substrate using a pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, wherein the polymeric matrix is applied on a permeable substrate, and wherein the polishing pad exhibits reduced defectivity and improved polishing performance are provided.
Acrylate Polyurethane Chemical Mechanical Polishing Layer
A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G′, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 μm/min.
Craig Lack - Wilmington DE, US Chau Duong - Newark DE, US David James - Newark DE, US
International Classification:
B24B001/00
US Classification:
451/041000
Abstract:
A polishing pad includes a flexible substrate and a polymeric polishing layer that has a repeatable pattern of polymeric asperities that are manufactured by printing, according to a gravure printing process or a screen printing process.
Multiple Polymer Belt Used As A Carrier In A Linear Belt Polishing System
Eric Staudt - Jeffersonville PA, US Chau Duong - Newark DE, US John Roberts - Newark DE, US Richard Levering - Hockessin DE, US
International Classification:
B24B021/00
US Classification:
451/296000, 451/533000
Abstract:
A support belt to be used with a polishing belt. The support belt includes an interior layer made of a polymer, wherein said interior layer has a first free end and a second free end that abut one another but are not attached to one another so as to form a first seam and an adhesive placed on an exterior surface of the interior layer. An exterior layer made of a polymer and attached to the adhesive, wherein the exterior layer has a first free end and a second free end that abut one another but are not attached to one another so as to form a second seam.
The present invention provides a polishing pad useful for polishing a semiconductor substrate, the polishing pad comprising: a polishing layer having a polishing surface, the polishing layer comprising particles disposed in a polymeric matrix, the particles being coated with a material having a surface tension of less than 50 dynes/cm, the coated particles being capable of releasing from the polishing surface during polishing.
Water-Based Polishing Pads And Methods Of Manufacture
The present invention provides a chemical mechanical polishing pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof. The present invention provides a water-based polishing pad with reduced defectivity and improved polishing performance.
Water-Based Polishing Pads Having Improved Adhesion Properties And Methods Of Manufacture
The present invention provides a chemical mechanical polishing pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, and wherein the polymeric matrix is applied on a permeable substrate. The present invention provides a water-based polishing pad with reduced defectivity and improved polishing performance.
Water-Based Polishing Pads Having Improved Contact Area
The present invention provides a chemical mechanical polishing pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, wherein the pad comprises: a Shore A hardness of 30 to 70; a void volume fraction of 0.2 to 80 percent; a tensile strength of 1 mPa to 5 mPa; and a percent elongation of 200 to 400.