Chun Man Ho

US Patent:

47693401, Sep 6, 1988

Filed:

Apr 17, 1986

Appl. No.:

6/853019

Inventors:

Thomas T. L. Chang - Santa Clara CA
Chun Ho - Cupertino CA
Arun K. Malhotra - Mt. View CA

Assignee:

Exel Microelectronics, Inc. - San Jose CA

International Classification:

H01L 21425

US Classification:

437 52

Abstract:

In the present invention, asperity in the floating gate of an EPROM or EEPROM device is reduced. An improved process for fabricating ultrahigh coupling interpoly isolation dielectrics comprising a structure of oxide-nitride-oxide is disclosed. The first oxide is grown on undoped LPCVD polycrystalline silicon (polysilicon) to reduce the grain boundary-oxidation enhancement effect at the interface of floating gate polysilicon and interpoly oxide. This results in much higher breakdown capability of interpoly dielectrics. As a consequence, the shrinkage of the interpoly electrical thickness to an extent far beyond current limitation becomes possible. Implanted dopants through interpoly oxide into the floating gate polysilicon also eliminate the oxidation enhanced diffusion from conventional POCl. sub. 3 doped polysilicon into tunnel oxide. The phosphorus induced trap in the tunnel oxide region are reduced.

US Patent:

20160313946, Oct 27, 2016

Filed:

Apr 21, 2016

Appl. No.:

15/135270

Inventors:

- San Jose CA, US
Chun Hok HO - Foster City CA, US

International Classification:

G06F 3/06
G11C 29/52
G06F 11/10

Abstract:

Memory systems may include a memory including a plurality of dies, and a controller suitable for receiving a host read request during programming of one of the plurality of dies; determining a suspendable die among the plurality of dies based on a suspension threshold; and suspending the determined suspendable die and performing the received request.

US Patent:

20160026526, Jan 28, 2016

Filed:

May 26, 2015

Appl. No.:

14/721888

Inventors:

- San Jose CA, US
Chung-Li Wang - Fremont CA, US
Chun Hok Ho - Foster City CA, US

International Classification:

G06F 11/10
G11C 29/52

Abstract:

A first physical location is read to obtain read data. Error correction decoding is performed on the read data to obtain error-corrected data where the error-corrected data includes first error-corrected metadata. Error correction encoding is performed on a first random sequence combined with a second random sequence, concatenated with second metadata. Error correction encoding is also performed on a sequence of zeros concatenated with the first error-corrected metadata to obtain second encoded data. The error-corrected data, the first encoded data, and the second encoded data are summed to obtain migrated data, which is stored at a second physical location.