A magnetoresistive random access memory (MRAM) cell, comprising a magnetic tunnel junction having frustrated magnetic reservoirs disposed oppositely along two edges of a free magnetic layer of the junction and magnetized in the same direction that is substantially orthogonal to a free magnetic layer.
A magnetic element which can switch states using a relatively lower magnetic field. The magnetic element comprises first and second magnetic layers separated by an intermediate layer. The magnetization of the first magnetic layer is fixed in a first direction parallel to the easy axis. The second magnetic layer comprises first and second magnetization vectors which are in opposite directions to create a magnetic boundary therein. The magnetic boundary can be driven out of the second magnetic layer by shifting the boundary along a first or second direction along the easy axis.
Combination Of Intrinsic And Shape Anisotropy For Reduced Switching Field Fluctuations
A magnetic memory cell and method of manufacturing thereof, wherein the angle between the shape anisotropy axis and the intrinsic anisotropy axis of the magnetic material layer is optimized to minimize fluctuations in the switching field. The angle between shape anisotropy axis and intrinsic anisotropy axis is preferably between 45 and less than 90 degrees. Magnetic layers may be used having increased thickness, resulting in increased activation energy. Magnetic memory cells may be manufactured that are more stable for long term storage and have improved write margins.
But many Minneapolis residents appear to be growing weary of the violence and destruction, while still supporting peaceful protests. Clearing rubble from a burned-out Walgreens on Saturday, Daniel Braun, 34, said he was sad to see the damage to his neighborhood.