David H Ferris

US Patent:

6897615, May 24, 2005

Filed:

Nov 1, 2001

Appl. No.:

10/004523

Inventors:

Alan C. Janos - Darnestown MD, US
David Ferris - Rockville MD, US
Ivan Berry - Ellicott City MD, US
Michael G. Ury - Great Barrington MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J007/24
H05B032/26

US Classification:

31511121, 31511171

Abstract:

An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

US Patent:

7163587, Jan 16, 2007

Filed:

Feb 8, 2002

Appl. No.:

10/071908

Inventors:

David William Kinnard - Olney MD, US
David Ferris - Rockville MD, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

C23C 16/48
C23F 1/10
H01L 21/306
C23C 16/52
C23F 1/00

US Classification:

118724, 118641, 118715, 15634537, 15634533

Abstract:

A reactor assembly and processing method for treating a substrate generally includes a base unit, a chuck assembly, a process chamber, an inlet manifold assembly and an exit manifold assembly. The inlet manifold assembly is in fluid communication with a first opening of the process chamber, wherein the inlet manifold assembly comprises a flow-shaping portion adapted to laterally elongate a gas and/or a reactant flow into the process chamber. The exhaust manifold assembly in fluid communication with a second opening of the process chamber and is diametrically opposed to the inlet manifold assembly. The process includes flowing a gas and/or reactive species into the process chamber of the reactor assembly in a direction that is about planar with the substrate surface providing improved uniformity and increased reactivity.

US Patent:

7449416, Nov 11, 2008

Filed:

Sep 1, 2005

Appl. No.:

11/217247

Inventors:

Alan F. Becknell - Ellicott City MD, US
Philip Hammar - Chevy Chase MD, US
David Ferris - Rockville MD, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L 21/302

US Classification:

438725, 438710

Abstract:

A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

US Patent:

8580076, Nov 12, 2013

Filed:

May 22, 2003

Appl. No.:

10/249962

Inventors:

Alan Frederick Becknell - Ellicott City MD, US
Thomas James Buckley - Ijamsville MD, US
David Ferris - Rockville MD, US
Aseem Kumar Srivastava - Germantown MD, US
Carlo Waldfried - Falls Church VA, US

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H01L 21/3065
C23C 16/00
C23C 16/4412
C23C 16/455
C23C 16/45561
C23C 16/45563
C23C 16/46
C23C 16/505
C23C 16/511

US Classification:

15634525, 15634529, 15634533, 15634534, 15634535, 15634536, 15634541, 15634548, 15634542, 118715, 118723 MW, 118723 ME, 118723 I, 118723 IR, 118725

Abstract:

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

US Patent:

20050241767, Nov 3, 2005

Filed:

Apr 30, 2004

Appl. No.:

10/836516

Inventors:

David Ferris - Rockville MD, US
Aseem Srivastava - Germantown MD, US
Maw Tun - Rockville MD, US

International Classification:

C23F001/00

US Classification:

156345350

Abstract:

A plasma processing system includes at least one multi-piece baffle plate. The multi-piece baffle plate assembly generally comprises at least one annular shaped ring portion having an opening and an insert portion dimensioned to sit within the opening. The individual pieces can be formed of a ceramic material. The effects caused by thermal gradients in the plate during plasma processing are minimized.

US Patent:

50714856, Dec 10, 1991

Filed:

Sep 11, 1990

Appl. No.:

7/580928

Inventors:

John C. Matthews - Gaithersburg MD
Robert D. Wooten - Rockville MD
David S. Ferris - Washington DC
Stuart N. Rounds - Germantown MD

Assignee:

Fusion Systems Corporation - Rockville MD

International Classification:

B08B 500

US Classification:

134 2

Abstract:

A method and apparatus for stripping a photoresist layer from a semiconductor wafer, wherein oxidizing gas is fed from the edge of the wafer to the center. The oxidizing gas may be directed so that it is incident on the heated wafer support platform before it is incident on the wafer.