David A Ferris

US Patent:

7449416, Nov 11, 2008

Filed:

Sep 1, 2005

Appl. No.:

11/217247

Inventors:

Alan F. Becknell - Ellicott City MD, US
Philip Hammar - Chevy Chase MD, US
David Ferris - Rockville MD, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L 21/302

US Classification:

438725, 438710

Abstract:

A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

US Patent:

8580076, Nov 12, 2013

Filed:

May 22, 2003

Appl. No.:

10/249962

Inventors:

Alan Frederick Becknell - Ellicott City MD, US
Thomas James Buckley - Ijamsville MD, US
David Ferris - Rockville MD, US
Aseem Kumar Srivastava - Germantown MD, US
Carlo Waldfried - Falls Church VA, US

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

H01L 21/3065
C23C 16/00
C23C 16/4412
C23C 16/455
C23C 16/45561
C23C 16/45563
C23C 16/46
C23C 16/505
C23C 16/511

US Classification:

15634525, 15634529, 15634533, 15634534, 15634535, 15634536, 15634541, 15634548, 15634542, 118715, 118723 MW, 118723 ME, 118723 I, 118723 IR, 118725

Abstract:

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).