Elbert S Huang

US Patent:

6670285, Dec 30, 2003

Filed:

Mar 14, 2001

Appl. No.:

09/808726

Inventors:

Craig Jon Hawker - Los Gatos CA
James Lupton Hedrick - Pleasanton CA
Elbert Emin Huang - Valhalla NY
Victor Yee-Way Lee - San Jose CA
Teddie Magbitang - Sunnyvale CA
Robert Dennis Miller - San Jose CA
Willi Volksen - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438780, 438781, 438790

Abstract:

Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2. 5 or less, preferably less than about 2. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

US Patent:

6685983, Feb 3, 2004

Filed:

Mar 14, 2001

Appl. No.:

09/808724

Inventors:

Craig Jon Hawker - Los Gatos CA
James Lupton Hedrick - Pleasanton PA
Elbert Emin Huang - Valhalla NY
Victor Yee-Way Lee - San Jose CA
Teddie Magbitang - Sunnyvale CA
David Mecerreyes - Santa Cruz CA
Robert Dennis Miller - San Jose CA
Willi Volksen - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 302

US Classification:

427 96, 427227, 427243, 427387

Abstract:

Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2. 5 or less, preferably less than about 2. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

US Patent:

6812551, Nov 2, 2004

Filed:

Feb 21, 2003

Appl. No.:

10/371270

Inventors:

Craig Jon Hawker - Los Gatos CA
James Lupton Hedrick - Pleasanton CA
Elbert Emin Huang - Valhalla NY
Victor Yee-Way Lee - San Jose CA
Teddie Magbitang - Sunnyvale CA
David Mecerreyes - Santa Cruz CA
Robert Dennis Miller - San Jose CA
Willi Volksen - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2352

US Classification:

257632, 257642, 257755, 257756, 257759, 257760

Abstract:

Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2. 5 or less, preferably less than about 2. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

US Patent:

8232618, Jul 31, 2012

Filed:

Aug 11, 2010

Appl. No.:

12/854352

Inventors:

Gregory Breyta - San Jose CA, US
David V. Horak - Essex Junction VT, US
Elbert E. Huang - Carmel NY, US
Douglas C. La Tulipe, Jr. - Guilderland NY, US
Shom Ponoth - Clifton Park NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

257522, 257506, 257513, 257637, 257E23013

Abstract:

Disclosed are embodiments of a semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device in order to minimize parasitic capacitances (e. g. , contact-to-contact capacitance, contact-to-diffusion region capacitance, gate-to-contact capacitance, gate-to-diffusion region capacitance, etc. ). Specifically, the structure can comprise a semiconductor device on a substrate and at least three dielectric layers stacked above the semiconductor device. An air gap is positioned with the second dielectric layer aligned above the semiconductor device and extending vertically from the first dielectric layer to the third dielectric layer. Also disclosed are embodiments of a method of forming such a semiconductor structure using a self-assembly approach.