Feng C Zhou

age ~74

from Carmel, IN

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Synthesis Of Structured Carbon Material From Organic Materials
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US Patent:

20210140042, May 13, 2021
Filed:

Nov 18, 2020
Appl. No.:

16/951496
Inventors:

- Pittsburgh PA, US
Feng Zhou - New York NY, US
International Classification:

C23C 16/455
C23C 16/40
C23C 18/12
C01B 32/90
Abstract:

A carbonized composition is formed by a process including providing an organic composition formed into a predetermined configuration, forming a protective layer over the organic composition, increasing temperature to carbonize the organic composition and form the carbonized composition, and removing the protective layer from the carbonized composition, wherein the carbonized composition has substantially the predetermined configuration. In a number of embodiments, the organic composition includes a nucleic acid. In a number of embodiments, the organic composition consists of a nucleic acid. The nucleic acid may, for example, be DNA.

Synthesis Of Structured Carbon Material From Organic Materials
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US Patent:

20200024734, Jan 23, 2020
Filed:

Sep 16, 2019
Appl. No.:

16/571911
Inventors:

- Pittsburgh PA, US
Feng Zhou - New York NY, US
International Classification:

C23C 16/455
C23C 16/40
C23C 18/12
C01B 32/90
Abstract:

A method of forming a carbonized composition includes providing an organic composition, forming a protective layer over the organic composition, increasing temperature to carbonize the organic composition and for a period of time to form the carbonized composition, and removing the protective layer from the carbonized composition.

Synthesis Of Structured Carbon Material From Organic Materials
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US Patent:

20170298517, Oct 19, 2017
Filed:

Apr 14, 2017
Appl. No.:

15/487696
Inventors:

- Pittsburgh PA, US
FENG ZHOU - NEW YORK NY, US
International Classification:

C23C 18/12
C23C 16/455
C23C 16/40
C01B 31/04
Abstract:

A method of forming a carbonized composition includes providing an organic composition, forming a protective layer over the organic composition, increasing temperature to carbonize the organic composition and for a period of time to form the carbonized composition, and removing the protective layer from the carbonized composition.

Systems And Methods For Fabricating Gate Structures For Semiconductor Devices
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US Patent:

20150024585, Jan 22, 2015
Filed:

Jul 19, 2013
Appl. No.:

13/946485
Inventors:

- Grand Cayman KY, US
Feng ZHOU - Beacon NY, US
Yan Ping SHEN - Saratoga Springs NY, US
Haiting WANG - Clifton Park NY, US
Haoran SHI - Malta NY, US
Wei Hua TONG - Mechanicville NY, US
Seung KIM - Andover MA, US
Yong Meng LEE - Mechanicville NY, US
Assignee:

GLOBALFOUNDRIES Inc. - Grand Cayman KY
International Classification:

H01L 21/28
US Classification:

438591
Abstract:

A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.