John W. Slemmons - Orange CA Francis J. Woolston - Santa Ana CA Patrick J. Redmond - Fullerton CA
Assignee:
Rockwell International Corporation - El Segundo CA
International Classification:
B23K 3102
US Classification:
228179
Abstract:
An aluminum foil has, sputtered upon it, a foil of tungsten, upon which a foil of gold is sputter deposited. The gold foil may be placed next to a gold substrate, and the three-foil combination bonded to the substrate with a stylus, upon which ultrasound is impressed, in the presence of a moderately elevated temperature. An aluminum region the size of the tip of the stylus is thus made available for an aluminum wire to be bonded to it, without any direct contact between the aluminum wire and the gold substrate.
Hermetic Package With External Patch Antenna And Associated Method
Roger L. Corey - Alta Loma CA Dale W. Swanson - Yorba Linda CA Francis J. Woolston - Santa Ana CA
Assignee:
The Boeing Company - Seattle WA
International Classification:
H01Q 138
US Classification:
343700MS
Abstract:
An antenna package includes a lid-like structure that fits onto an electrically conductive, metallic box-like structure. The lid-like structure includes an electrically conductive, metallic seal member that is connected to an antenna and defines a primary opening. The antenna includes a dielectric mounted between an inner metallic layer and an outer metallic layer. The connection between the seal member and the antenna is a substantially hermetic, soldered connection between the seal member and the inner metallic layer, such that the inner metallic layer is electrically connected to the seal member. The soldered connection secures the antenna to the seal member such that the inner metallic layer occludes the primary opening. A substantially hermetic, fused connection is provided between the lid-like structure and the box-like structure so that a hermetically sealed chamber is defined within the box-like structure. Electric circuitry is positioned in the chamber and is connected to the antenna.
Metallurgical Method For Die Attaching Silicon On Sapphire Devices To Obtain Heat Resistant Bond
Herbert A. Bell - La Habra CA Micheal E. McCoy - Orange CA Francis J. Woolston - Santa Ana CA
Assignee:
Rockwell International Corporation - El Segundo CA
International Classification:
B23K 3102 B01J 1700
US Classification:
228123
Abstract:
A method for attaching a silicon-on-sapphire (SOS) device to a gold-plated surface of a package for the device. A layer of a metal adherent to both sapphire and gold such as, for example, tungsten, is deposited on the back side of a wafer of the devices. A layer of gold is then deposited on the tungsten layer. A preform of an alloy compatible with gold, such as gold-germanium, interposed between and in contact with the die and the package, is heated and then cooled to bond the die to the surface of the package.
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