Gregory A Horner

US Patent:

7012438, Mar 14, 2006

Filed:

Jul 9, 2003

Appl. No.:

10/616086

Inventors:

Thomas G. Miller - Sunnyvale CA, US
Gregory S. Horner - Santa Clara CA, US
Amin Samsavar - San Jose CA, US
Zhiwei Xu - Sunnyvale CA, US
Patrick Stevens - Norman OK, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01R 27/08
G01R 27/26
G01N 27/60

US Classification:

324716, 324678, 324452

Abstract:

A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

US Patent:

7064565, Jun 20, 2006

Filed:

Oct 31, 2003

Appl. No.:

10/699352

Inventors:

Zhiwei Xu - Sunnyvale CA, US
Thomas G. Miller - Sunnyvale CA, US
Jianou Shi - Milpitas CA, US
Gregory S. Horner - Santa Clara CA, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01R 31/302
G01R 31/26

US Classification:

324750, 324765

Abstract:

Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.

US Patent:

7358748, Apr 15, 2008

Filed:

Nov 30, 2005

Appl. No.:

11/291075

Inventors:

Thomas G. Miller - Sunnyvale CA, US
Gregory S. Horner - Santa Clara CA, US
Amin Samsavar - San Jose CA, US
Zhiwei Xu - Sunnyvale CA, US
Patrick Stevens - Norman OK, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01R 27/08
G01R 27/26
G01R 31/302
G01N 27/60

US Classification:

324716, 324750, 324452, 324671

Abstract:

A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

US Patent:

8299416, Oct 30, 2012

Filed:

Mar 1, 2010

Appl. No.:

12/660688

Inventors:

Mark A. Arbore - Los Altos CA, US
David L Klein - Palo Alto CA, US
Leonid A. Vasilyev - Beaverton OR, US
John M. Schmidt - Oakland CA, US
James E. Hudson - Portland OR, US
Gregory S. Horner - Felton CA, US

Assignee:

Tau Science Corporation - Felton CA

International Classification:

G01N 21/64
G01J 1/58

US Classification:

2502222, 2504591, 702182

Abstract:

The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.