Helen T Chung

US Patent:

6811831, Nov 2, 2004

Filed:

Nov 20, 2002

Appl. No.:

10/300137

Inventors:

William C. Koutny - Santa Clara CA
Helen L. Chung - Santa Clara CA

Assignee:

Silicon Magnetic Systems - San Jose CA

International Classification:

H05H 124

US Classification:

427578, 427579

Abstract:

A method is provided which includes creating a plasma from a gas mixture including diatomic nitrogen gas and a gas comprising silicon. In addition, the method includes exposing a microelectronic topography to the plasma to form a silicon nitride layer thereon. In some cases, the method may include forming the silicon nitride layer at a temperature less than approximately 300Â C. Furthermore, the method may include subsequently processing the microelectronic topography at a temperature greater than or equal to approximately 250Â C. such that a stress change of less than approximately 1. 0Ã10 dynes/cm occurs within the silicon nitride layer. In addition, a microelectronic topography is provided which has a silicon nitride layer with a concentration of diatomic hydrogen that is at least one order of magnitude lower than a concentration of diatomic hydrogen within a silicon nitride layer formed from a plasma generated from ammonia.

US Patent:

7205164, Apr 17, 2007

Filed:

Jan 19, 2005

Appl. No.:

11/039301

Inventors:

Sam Geha - Cupertino CA, US
Benjamin C. E. Schwarz - San Jose CA, US
Chang Ju Choi - Fremont CA, US
Biju Parameshwaran - Union City CA, US
Eugene Y. Chen - Fremont CA, US
Helen L. Chung - San Jose CA, US
Kamel Ounadjela - Belmont CA, US
Witold Kula - Cupertino CA, US

Assignee:

Silicon Magnetic Systems - San Jose CA

International Classification:

H01L 21/00

US Classification:

438 3, 438240, 257E21665

Abstract:

Methods for patterning a magnetic cell junction and a topography used for and/or resulting from such methods are provided. In particular, a method is provided which includes etching portions of a topography adjacent to a patterned photoresist layer to a level within a cap film of the topography, removing etch residues from the topography and subsequently etching the remaining portions of the cap film to expose an uppermost magnetic layer. Another method is provided which includes patterning a dielectric mask layer above a patterned upper portion of a magnetic cell junction and ion milling a lower portion of the magnetic cell junction in alignment with the mask layer. An exemplary topography which may result and/or may be used for such methods includes a stack of layers having a dual layer cap film arranged above at least two magnetic layers spaced apart by a tunneling layer.

US Patent:

20220292978, Sep 15, 2022

Filed:

Sep 10, 2021

Appl. No.:

17/447385

Inventors:

- San Francisco CA, US
Greg Hogan - Mountain View CA, US
Jennifer Julia Zhang - San Francisco CA, US
Kathryn Siegel - San Francisco CA, US
Kelsey Lam - Fremont CA, US
Sean McGee - San Francisco CA, US
Alex Wu - San Francisco CA, US
Tirso Peguero - San Francisco CA, US
Emily White - Long Beach CA, US
Eric Shreve - San Francisco CA, US
Wei Wu - San Francisco CA, US
Chaein Jung - Seoul, KR
Helen Chung - Great Falls VA, US
Sachie Weber - Aspen CO, US
Yosub Shin - Seoul, KR
Utkarsh Jaiswal - San Francisco CA, US

International Classification:

G08G 1/00
G01C 21/36
G08G 1/123

Abstract:

Disclosed are systems, methods, and non-transitory computer-readable media for automated fleet tracking. A route management system enables fleet managers to define and assign routes for vehicles in a fleet, as well as set route tracking configurations for customized tracking of the vehicles. For example, the route tracking configuration may include customizations to the scheduled start and/or end time of a route, a threshold for determining that a vehicle has arrived and/or departed from a scheduled stop, and the like.