James M Krebs

US Patent:

48621196, Aug 29, 1989

Filed:

Jun 29, 1988

Appl. No.:

7/213042

Inventors:

Clifford M. Krowne - Alexandria VA
Gary A. Prinz - Alexandria VA
James J. Krebs - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01P 136

US Classification:

333 24R

Abstract:

A semiconductor device useable as an electromagnetic isolator. The device has a semiconductor substrate epitaxial with a layer of metal, the latter deposited so as to generate a residual magnetic flux. A waveguiding structure is disposed transverse to the flux effective to cause electromagnetic signals propagating in the waveguiding structure to be attenuated a different amount depending on the direction of propagation. The waveguiding structure is preferably a seminconductor layer deposited epitaxially with the substrate in a channel in the metal.

US Patent:

48289353, May 9, 1989

Filed:

Mar 30, 1988

Appl. No.:

7/176115

Inventors:

Berend T. Jonker - Bowie MD
Gary A. Prinz - Alexandria VA
James J. Krebs - Alexandria VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 21265
H01S 319

US Classification:

428642

Abstract:

A passivating or insulating layer is described for semiconductor substrat The passivating layer is of the formula Zn. sub. 1-x-y M. sub. x Q. sub. y Se:D where 0. ltoreq. x. ltoreq. 1, 0. ltoreq. y. ltoreq. 1, M and Q represent different specified elements and D represents a dopant. It is prefered that M and Q are Fe or Mn. The substrate is preferably a III-V semiconductor compound. The devices are capable of rapid switching among other uses.

US Patent:

48231770, Apr 18, 1989

Filed:

Jun 30, 1988

Appl. No.:

7/213862

Inventors:

Gary A. Prinz - Alexandria VA
James J. Krebs - Alexandria VA
Berend T. Jonker - Bowie MD

Assignee:

United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 4106

US Classification:

357 27

Abstract:

A device and method for magnetizing a material having a magnetic constituent. In a preferred embodiment, a ferromagnetic film and a first film are selectively deposited at first and second locations on the material. The ferromagnetic film is magnetized in a first direction. A voltage source is coupled between the ferromagnetic and first films to enable a spin-polarized current to flow through the material to magnetize the material.