Jeffrey Bernard Mccann

US Patent:

6526909, Mar 4, 2003

Filed:

Mar 22, 2000

Appl. No.:

09/532621

Inventors:

Kevin John Grannen - Fremont CA
Jeffrey Arthur McCann - Tracy CA
Xiaoding Ma - Fremont CA
Jing Gui - Fremont CA
Mark Anthony Shows - Fremont CA

Assignee:

Seagate Technology, LLC - Scotts Valley CA

International Classification:

H05H 100

US Classification:

118723FI, 118723 R, 25049221, 250425, 427569, 427577

Abstract:

A device for increasing the incident energy of an ion for coating a disc in an ion beam deposition process. The ion beam deposition process is performed in a chamber with the disc to be coated disposed therein. An ion source, having a voltage level, is introduced into the chamber for generating an ion beam for depositing ions on the disc. A bias contact is coupled to the disc and a power supply is coupled to the bias contact. The power supply applies a voltage level to the bias contact that is less than the voltage level of the ion source thereby creating a negative bias voltage between the disc and the ion source. This negative bias voltage causes the incident energy of the ion to increase. As a result, the optimal incident energy can be achieved using a lower original energy.

US Patent:

6689425, Feb 10, 2004

Filed:

Oct 22, 2001

Appl. No.:

09/982937

Inventors:

Xiaoding Ma - Redwood City CA
Kevin J. Grannen - Fremont CA
Jing Gui - Fremont CA
Jeffrey A. McCann - Tracy CA
Mark A. Shows - Fremont CA

Assignee:

SeagateTechnology LLC - Scotts Valley CA

International Classification:

B05D 512

US Classification:

427562, 427577, 427525, 427131

Abstract:

Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-Ã-vis conventional a-C:H materials.

US Patent:

6982071, Jan 3, 2006

Filed:

Jan 14, 2004

Appl. No.:

10/756466

Inventors:

Xiaoding Ma - Redwood City CA, US
Kevin J. Grannen - Fremont CA, US
Jing Gui - Fremont CA, US
Jeffrey A. McCann - Tracy CA, US
Mark A. Shows - Fremont CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

C01B 31/06
C23C 14/48
C23C 14/24
H05H 1/46

US Classification:

423445R, 423446, 427131, 427523, 427562, 427577

Abstract:

Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.

US Patent:

6286453, Sep 11, 2001

Filed:

Mar 22, 2000

Appl. No.:

9/532620

Inventors:

Kevin John Grannen - Fremont CA
Jeffrey Arthur McCann - Tracy CA
Xiaoding Ma - Fremont CA
Jing Gui - Fremont CA
Mark Anthony Shows - Fremont CA

Assignee:

Seagate Technologies, Inc. - Scotts Valley CA

International Classification:

C23C 1600
H05H 100

US Classification:

118723FI

Abstract:

A device for reducing the contamination of a disc being coated during an ion beam deposition process. The ion beam deposition process is performed in a chamber having an upper portion and a lower portion with the disc being disposed in the lower portion of the chamber. An ion source is introduced into the lower chamber for generating an ion beam for depositing ions on the disc. In the upper portion of the chamber is a pump for creating negative pressure in the chamber. A portion of the ion beam contacts the pump forming contaminants on the pump which cause the contamination of the disc. A baffle assembly is disposed in the chamber between the pump and the ion source. Said baffle assembly includes a baffle that reduces the portion of the ion beam contacting said pump thereby reducing the forming of contaminants on the pump. The baffle assembly also includes a baffle cap disposed above the disc so that when the contaminants dislodge from the pump, the baffle cap prevents the contaminants from contaminating said disc.

US Patent:

63127989, Nov 6, 2001

Filed:

Sep 21, 1999

Appl. No.:

9/400187

Inventors:

Xiaoding Ma - Redwood City CA
Kevin J. Grannen - Fremont CA
Jing Gui - Fremont CA
Jeffrey A. McCann - Tracy CA
Mark A. Shows - Fremont CA

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 572

US Classification:

428336

Abstract:

Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-a-vis conventional a-C:H materials.