Jie Bai

US Patent:

8034697, Oct 11, 2011

Filed:

Sep 18, 2009

Appl. No.:

12/680872

Inventors:

James Fiorenza - Wilmington MA, US
Anthony Lochtefeld - Ipswich MA, US
Jie Bai - Bedford MA, US
Ji-Soo Park - Methuen MA, US
Jennifer Hydrick - Kingston NH, US
Jizhong Li - Bordentown NJ, US
Zhiyuan Cheng - Lincoln MA, US

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438481, 257E2109, 438 94

Abstract:

Methods and structures are provided for formation of devices, e. g. , solar cells, on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

US Patent:

8384196, Feb 26, 2013

Filed:

Sep 23, 2011

Appl. No.:

13/243521

Inventors:

Zhiyuan Cheng - Lincoln MA, US
James Fiorenza - Wilmington MA, US
Jennifer M. Hydrick - Kingston NH, US
Anthony J. Lochtefeld - Ipswich MA, US
Ji-Soo Park - Methuen MA, US
Jie Bai - Bedford MA, US
Jizhong Li - Bordentown NJ, US

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu

International Classification:

H01L 29/06

US Classification:

257618, 257E27112, 257E29003, 257E29004, 257E29022, 257E31002, 257622, 257623, 257628

Abstract:

Methods and structures are provided for formation of devices on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.