Jie Bai from Manchester, NH, age 64

Us Patents

Formation Of Devices By Epitaxial Layer Overgrowth
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US Patent:

8034697, Oct 11, 2011
Filed:

Sep 18, 2009
Appl. No.:

12/680872
Inventors:

James Fiorenza - Wilmington MA, US
Anthony Lochtefeld - Ipswich MA, US
Jie Bai - Bedford MA, US
Ji-Soo Park - Methuen MA, US
Jennifer Hydrick - Kingston NH, US
Jizhong Li - Bordentown NJ, US
Zhiyuan Cheng - Lincoln MA, US
Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu
International Classification:

H01L 21/20
H01L 21/36
US Classification:

438481, 257E2109, 438 94
Abstract:

Methods and structures are provided for formation of devices, e. g. , solar cells, on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

Defect Reduction Using Aspect Ratio Trapping
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US Patent:

8173551, May 8, 2012
Filed:

Sep 7, 2007
Appl. No.:

11/852078
Inventors:

Jie Bai - Salem NH, US
Ji-Soo Park - Methuen MA, US
Anthony J. Lochtefeld - Somerville MA, US
Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd. - Hsin-Chu
International Classification:

H01L 21/31
US Classification:

438758, 257E2109
Abstract:

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Formation Of Devices By Epitaxial Layer Overgrowth
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US Patent:

8384196, Feb 26, 2013
Filed:

Sep 23, 2011
Appl. No.:

13/243521
Inventors:

Zhiyuan Cheng - Lincoln MA, US
James Fiorenza - Wilmington MA, US
Jennifer M. Hydrick - Kingston NH, US
Anthony J. Lochtefeld - Ipswich MA, US
Ji-Soo Park - Methuen MA, US
Jie Bai - Bedford MA, US
Jizhong Li - Bordentown NJ, US
Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu
International Classification:

H01L 29/06
US Classification:

257618, 257E27112, 257E29003, 257E29004, 257E29022, 257E31002, 257622, 257623, 257628
Abstract:

Methods and structures are provided for formation of devices on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

Defect Reduction Using Aspect Ratio Trapping
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US Patent:

20120199876, Aug 9, 2012
Filed:

Apr 13, 2012
Appl. No.:

13/446612
Inventors:

Jie Bai - Salem NH, US
Ji-Soo Park - Methuen MA, US
Anthony J. Lochtefeld - Ipswich MA, US
Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. - Hsin-Chu
International Classification:

H01L 29/06
US Classification:

257190, 257E29024
Abstract:

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Formation Of Devices By Epitaxial Layer Overgrowth
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US Patent:

20130134480, May 30, 2013
Filed:

Jan 9, 2013
Appl. No.:

13/737731
Inventors:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu, TW
Jizhong Li - Bordentown NJ, US
James Fiorenza - Wilmington MA, US
Jie Bai - Bedford NH, US
Ji-Soo Park - Methuen MA, US
Anthony J. Lochtefeld - Ipswich MA, US
Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. - Hsin-Chu
International Classification:

H01L 21/02
H01L 29/205
US Classification:

257183, 438479, 438458
Abstract:

Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.