Jin Xu

US Patent:

20100096360, Apr 22, 2010

Filed:

Oct 15, 2009

Appl. No.:

12/579860

Inventors:

You Wang - Cupertino CA, US
Yuchun Wang - Santa Clara CA, US
Yan Wang - Sunnyvale CA, US
Jin Xu - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C09K 13/00
C23F 1/02

US Classification:

216 53, 252 791

Abstract:

Methods and apparatus are provided for polishing barrier layer materials. In one embodiment, a composition is provided for removing at least a barrier material from a substrate surface, including includes a base composition, a silica abrasive, a solvent, a pH between about 7 and about 10, and one or more components selected from the group of a metal passivating compound, an oxidizer, and an alumina abrasive. The composition may be used to chemical mechanical polishing process a substrate surface having a ruthenium-based barrier and one or more material selected from the group of a polysilicon layer, a dielectric layer, or metal layer.

US Patent:

20120156890, Jun 21, 2012

Filed:

Nov 28, 2011

Appl. No.:

13/305559

Inventors:

KANG SUB YIM - Palo Alto CA, US
Jin XU - Fremont CA, US
Sure NGO - Dublin CA, US
Alexandros T. DEMOS - Fremont CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/3105

US Classification:

438763, 257E21241

Abstract:

A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.

US Patent:

20140017895, Jan 16, 2014

Filed:

Jun 18, 2013

Appl. No.:

13/920380

Inventors:

Jin XU - Fremont CA, US
Kang Sub YIM - Palo Alto CA, US
Alexandros T. DEMOS - Fremont CA, US

International Classification:

H01L 21/3065

US Classification:

438694, 438710

Abstract:

Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

US Patent:

20220412582, Dec 29, 2022

Filed:

Nov 25, 2020

Appl. No.:

17/756519

Inventors:

- Oakland CA, US
Jin Xu - Oakland CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

F24F 5/00
F25B 23/00

Abstract:

In most buildings energy for space heating and cooling can be used to maintain the thermal comfort of the building's human occupants by maintaining the interior air temperature at a set point. If one could maintain the human occupant's thermal comfort while decreasing the heating or increasing the cooling set point, energy savings are possible. Many embodiments implement methods and systems of tunable emissivity surfaces in improving building efficiency. Several embodiment implement tuning the thermal emissivity of interior building surfaces at long-wave infrared wavelengths to maintain thermal comfort.

US Patent:

20200027157, Jan 23, 2020

Filed:

Jul 17, 2018

Appl. No.:

16/037700

Inventors:

- San Jose CA, US
Zhenyu Yan - Cupertino CA, US
Jin Xu - San Jose CA, US
Abhishek Pani - Sunnyvale CA, US

International Classification:

G06Q 40/02
G06N 5/04
G06Q 30/02
G06N 99/00

Abstract:

Methods, systems, and non-transitory computer readable storage media are disclosed for using reject inference to generate synthetic data for modifying lead scoring models. For example, the disclosed system identifies an original dataset corresponding to an output of a lead scoring model that generates scores for a plurality of prospects to indicate a likelihood of success of prospects of the plurality of prospects. In one or more embodiments, the disclosed system selects a reject inference model by performing simulations on historical prospect data associated with the original dataset. Additionally, the disclosed system uses the selected reject inference model to generate an imputed dataset by generating synthetic outcome data representing simulated outcomes of rejected prospects in the original dataset. The disclosed system then uses the imputed dataset to modify the lead scoring model by modifying at least one parameter of the lead scoring model using the synthetic outcome data.