John G Liebeskind

US Patent:

6534850, Mar 18, 2003

Filed:

Apr 16, 2001

Appl. No.:

09/836061

Inventors:

John Liebeskind - Corvallis OR

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 2320

US Classification:

257682, 257729, 438115

Abstract:

An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

US Patent:

6686642, Feb 3, 2004

Filed:

Jun 11, 2001

Appl. No.:

09/879876

Inventors:

Michael J. Regan - Corvallis OR
John Liebeskind - Corvallis OR
Charles C. Haluzak - Corvallis OR

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 2900

US Classification:

257521, 438456, 438107

Abstract:

An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

US Patent:

6756244, Jun 29, 2004

Filed:

Jan 29, 2002

Appl. No.:

10/060880

Inventors:

John Liebeskind - Corvallis OR

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 2166

US Classification:

438 14, 438128

Abstract:

An interconnect structure including a substrate, an interconnect device formed on the substrate, and a test device formed on the substrate.

US Patent:

6878638, Apr 12, 2005

Filed:

May 13, 2003

Appl. No.:

10/437868

Inventors:

Michael J. Regan - Corvallis OR, US
John Liebeskind - Corvallis OR, US
Charles C. Haluzak - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L021/302

US Classification:

438735, 438107, 438456

Abstract:

An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

US Patent:

6969667, Nov 29, 2005

Filed:

Apr 1, 2002

Appl. No.:

10/114392

Inventors:

John Liebeskind - Corvallis OR, US
James C. McKinnell - Salem OR, US
Paul J. Benning - Corvallis OR, US
Chien-Hua Chen - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L021/30

US Classification:

438455, 438456, 438458

Abstract:

An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.

US Patent:

6988924, Jan 24, 2006

Filed:

Apr 14, 2003

Appl. No.:

10/412918

Inventors:

Sriram Ramamoorthi - Corvallis OR, US
Zhizhang Chen - Corvallis OR, US
John Liebeskind - Corvallis OR, US
Ronald L. Enck - Corvallis OR, US
Jennifer Shih - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01J 9/00
H01J 1/38
H01J 13/00
H01K 1/04

US Classification:

445 31, 313553

Abstract:

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

US Patent:

7042075, May 9, 2006

Filed:

Dec 19, 2002

Appl. No.:

10/328261

Inventors:

John Liebeskind - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 23/29
H01L 23/06
H01L 21/44
H01L 21/48
H01L 21/50

US Classification:

257682, 257729, 438115

Abstract:

An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

US Patent:

7045958, May 16, 2006

Filed:

Apr 14, 2003

Appl. No.:

10/413048

Inventors:

Sriram Ramamoorthi - Corvallis OR, US
Zhizhang Chen - Corvallis OR, US
John Liebeskind - Corvallis OR, US
Ronald L. Enck - Corvallis OR, US
Jennifer Shih - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01J 17/24
H01J 19/70
H01J 61/26

US Classification:

313553, 313559, 313549, 313560, 313558

Abstract:

A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.