John Michael Mooney

US Patent:

49160885, Apr 10, 1990

Filed:

Apr 29, 1988

Appl. No.:

7/187939

Inventors:

John B. Mooney - San Jose CA
Arden Sher - San Carlos CA

Assignee:

SRI International - Menlo Park CA

International Classification:

H01L 2120

US Classification:

437 81

Abstract:

A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound. A second layer is epitaxially deposited on the first layer so both layers have virtually the same lattice constant and dislocation density.

US Patent:

46032584, Jul 29, 1986

Filed:

Nov 16, 1984

Appl. No.:

6/672365

Inventors:

Arden Sher - Belmont CA
John B. Mooney - San Jose CA

Assignee:

SRI International - Menlo Park CA

International Classification:

G01J 520

US Classification:

250370

Abstract:

A photocapacitive image detector array comprises a matrix of M. times. N spaced columns of relatively high carrier concentration extending between first and second opposite faces of a semiconductor substrate having a relatively low carrier concentration. N parallel spaced electrode stripes extend in the X direction on the first face and M parallel spaced semiconductor stripes of intermediate carrier concentration extend in the Y direction on the second face. Stripe k of the N stripes makes ohmic contacts with each of the M columns, where k=1,2,. . . N. Stripe p of the M semiconductor stripes makes contact with each of the N columns, where p=1, 2,. . . M. Each of the M regions has a depletion layer having a thickness adapted to be modulated by radiation from an image to be detected. M parallel spaced electrode stripes extend in the Y direction so that stripe q of electrode stripes M is in registration with semiconductor stripe q, where q=1, 2,. . . M. A composite insulating layer, including two insulating thin films, is sandwiched between the M electrode stripes and M semiconductor stripes.

US Patent:

45298327, Jul 16, 1985

Filed:

Feb 21, 1984

Appl. No.:

6/581783

Inventors:

Arden Sher - Belmont CA
John B. Mooney - San Jose CA

Assignee:

Savin Corporation - Stamford CT

International Classification:

H01L 3106

US Classification:

136260

Abstract:

A solar cell in which the essential feature is a thin film of lead-cadmium-sulphide alloy. This alloy is preferably formed by spray pyrolysis from a solution containing the necessary ingredients. The solar cell advantageously takes the form of a homojunction constructed of two layers of lead-cadmium-sulphide alloy, with one of the layers being p-doped and the other of the layers being n-doped. The solar cell may be produced with an intrinsic layer interposed between the p-type layer and the n-type layer. The solar cell may also be made with a semiconductive layer of lead-cadmium-sulphide in contact with a metallic substrate.

US Patent:

50686950, Nov 26, 1991

Filed:

Apr 9, 1990

Appl. No.:

7/506046

Inventors:

John B. Mooney - San Jose CA
Arden Sher - San Carlos CA

Assignee:

SRI International - Menlo Park CA

International Classification:

H01L 29161
H01L 29205

US Classification:

357 16

Abstract:

A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound. A second layer is epitaxially deposited on the first layer so both layers have virtually the same lattice constant and dislocation density.

US Patent:

57530971, May 19, 1998

Filed:

Oct 3, 1996

Appl. No.:

8/725626

Inventors:

Hossein Sharifian - Austin TX
John E. Mooney - Austin TX

Assignee:

Sachem, Inc. - Austin TX

International Classification:

B01D 6144

US Classification:

205437

Abstract:

In one embodiment, the invention relates to a process for purifying solutions containing a hydroxide compound, including the steps of: (A) providing an electrochemical cell containing an anode, a cathode, a cation selective membrane and a bipolar membrane, the bipolar membrane having an anion selective side facing the anode and a cation selective side facing the cathode, wherein the cation selective membrane is positioned between the anode and the bipolar membrane, and the bipolar membrane is positioned between the cation selective membrane and the cathode, thereby defining a feed compartment between the cation selective membrane and the anode, a recovery compartment between the bipolar membrane and the cation selective membrane, and a water compartment between the bipolar membrane and the cathode; (B) charging a solution of an ionic compound at a first concentration to the water compartment, and water to the recovery compartment; (C) charging a solution containing the hydroxide compound at a second concentration to the feed compartment; (D) passing a current through the electrochemical cell to produce the hydroxide compound at a third concentration in the recovery compartment; and (E) recovering the hydroxide compound from the recovery compartment.

US Patent:

52469166, Sep 21, 1993

Filed:

Mar 22, 1989

Appl. No.:

7/327323

Inventors:

John B. Mooney - San Jose CA
Arden Sher - San Carlos CA

Assignee:

SRI International - Menlo Park CA

International Classification:

H01L 3912
C25D 1302

US Classification:

505 1

Abstract:

A process is disclosed for forming shaped superconductors of the metal oxide type by electrophoretic deposition of superconducting particles which comprises providing particulate superconducting material of the metal oxide type coated with a fusible binder, electrophoretically depositing such coated superconducting particles on a substrate, heating the coated substrate sufficiently to fuse the binder to the substrate, fabricating the coated substrate into a desired shape, removing the binder, and then sintering the coated substrate to sinter the superconducting particles together. In a preferred embodiment the process further comprises immersing the coated substrate in an electrostatic field during the fusion step to both orient and maintain the superconducting particles in a desired direction.

US Patent:

49904167, Feb 5, 1991

Filed:

Jun 19, 1989

Appl. No.:

7/368268

Inventors:

John B. Mooney - San Jose CA

Assignee:

Coloray Display Corporation - Fremont CA

International Classification:

G03F 728

US Classification:

430 26

Abstract:

A method for the deposition of phosphor containing materials to CRT or VFD faceplates using reversal toning is dislosed. The method incudes the steps of charging the phosphor containing particles and the surface of a patterned photoresist with a charge of the same sign so that the particles are accurately deposited directly to an uncharged transparent surface electrode on the substrate. In a preferred embodiment, glass and/or polymeric binders may be included with the phosphor containing materials to enhance adherence to the substrate.

US Patent:

57097909, Jan 20, 1998

Filed:

Oct 3, 1996

Appl. No.:

8/725609

Inventors:

Hossein Sharifian - Austin TX
John E. Mooney - Austin TX

Assignee:

Sachem, Inc. - Austin TX

International Classification:

B01D 6144

US Classification:

205437

Abstract:

In one embodiment, the invention relates to a process for purifying solutions containing a hydroxide compound, including the steps of: (A) providing an electrochemical cell containing an anode, a cathode, a cation selective membrane and an anion selective membrane, wherein the cation selective membrane is positioned between the cathode and the anion selective membrane, and the anion selective membrane is positioned between the cation selective membrane and the anode, thereby defining a feed compartment between the cation selective membrane and the anion selective membrane, a recovery compartment between the cathode and the cation selective membrane, and a water compartment between the anion selective membrane and the anode; (B) charging a solution of an ionic compound at a first concentration to the water compartment, and water to the recovery compartment; (C) charging a solution of the hydroxide compound at a second concentration to the feed compartment; (D) passing a current through the cell to produce the hydroxide compound at a third concentration in the recovery compartment; and (E) recovering hydroxide compound from the recovery compartment.