Kelly R Fong

US Patent:

6506994, Jan 14, 2003

Filed:

Jun 15, 2001

Appl. No.:

09/882769

Inventors:

Mark Fodor - Los Gatos CA
Chen-An Chen - Milipitas CA
Himanshu Pokharna - San Jose CA
Son T. Nguyen - San Jose CA
Kelly Fong - San Francisco CA
Inna Shmurun - Foster City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219 39, 219395, 219411, 392418, 118728, 438799, 165 58

Abstract:

A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers.

US Patent:

8128750, Mar 6, 2012

Filed:

Mar 29, 2007

Appl. No.:

11/730049

Inventors:

Ian J. Kenworthy - Mountain View CA, US
Kelly W. Fong - San Mateo CA, US
Leonard J. Sharpless - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
C23C 14/00

US Classification:

118715, 118 50

Abstract:

Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.

US Patent:

8282987, Oct 9, 2012

Filed:

Jan 31, 2012

Appl. No.:

13/362169

Inventors:

Ian J. Kenworthy - Mountain View CA, US
Kelly W. Fong - San Mateo CA, US
Leonard J. Sharpless - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B05D 5/12
C25D 3/00

US Classification:

427 80, 205261

Abstract:

Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.

US Patent:

8469368, Jun 25, 2013

Filed:

Aug 12, 2009

Appl. No.:

12/540186

Inventors:

Ian Jared Kenworthy - Mountain View CA, US
Kelly Fong - San Mateo CA, US
Michael C. Kellogg - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B23B 31/28

US Classification:

279128, 361234, 414941

Abstract:

A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.

US Patent:

6387207, May 14, 2002

Filed:

Apr 28, 2000

Appl. No.:

09/561325

Inventors:

Karthik Janakiraman - Santa Clara CA
Kelly Fong - San Francisco CA
Chen-An Chen - San Jose CA
Paul Le - San Jose CA
Rong Pan - San Francisco CA
Shankar Venkataraman - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

156345, 118723 ME

Abstract:

A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.