Li I Xiao

age ~51

from Los Altos, CA

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Also known as:

Li Te Xiao
Li L Xiao
Li Xia
Li X Iao
Xiao Li

Phone and address:: 440 Rinconada Ct, Los Altos, CA 94022

Connected to:

Li Xiao Phones & Addresses

440 Rinconada Ct, Los Altos, CA 94022
Palo Alto, CA
San Jose, CA
305 Lincoln Ave, Urbana, IL 61801 • (217)3659653
509 Main St, Urbana, IL 61801 • (217)3659653
Sunnyvale, CA
Naperville, IL
Westmont, IL
Champaign, IL

Medicine Doctors

Dr. Li Xiao, Oakland CA - MD (Doctor of Medicine)

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Specialties:

Family Medicine

Address:

Kaiser Oakland Medical Center
280 W Macarthur Blvd, Oakland, CA 94611
(510)7521000 (Phone)

Certifications:

Family Practice, 2007

Awards:

Healthgrades Honor Roll

Languages:

English
Chinese, Mandarin

Hospitals:

Kaiser Oakland Medical Center
280 W Macarthur Blvd, Oakland, CA 94611

Dameron Hospital
525 West Acacia Street, Stockton, CA 95203

Kaiser Permanente Oakland Medical Center
280 West Macarthur Boulevard, Oakland, CA 94611

Kaiser Permanente South Sacramento Medical Center
6600 Bruceville Road, Sacramento, CA 95823

Education:

Medical School
Shanghai School Of Medicine
Graduated: 1992

Li Ren Xiao, Fremont CA

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Specialties:

Family Medicine
Cardiology

Work:

Mission Primary Care
3755 Beacon Ave, Fremont, CA 94538
Oakland Medical Ctr
3801 Howe St, Oakland, CA 94611
Kaiser Permanente Hospital - Oakland
280 W Macarthur Blvd, Oakland, CA 94611

Education:

Shanghai Medical University (1992)

Real Estate Brokers

Li Xiao, San Jose CA Agent

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Work:

PIONEER RE/MAX
San Jose, CA
(650)8511200 (Phone)

Li Xiao, San Jose CA Real estate agent

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Specialties:

Buyer's Agent
Listing Agent

Work:

RE/MAX VALLEY PROPERTIES
1124 Meridian Ave., San Jose, CA 95125
(408)6878269 (Office), (408)6878269 (Cell), (800)8517689 (Fax)

Description:

***MY COMMITMENT: Whether it’s your first home purchase or an investment property, the RIGHT Realtor can make all the difference. When you work with me, I am committed to help you find just the right property in the right amount of time. I guarantee full services whether you are first time buyers, sellers or seasoned investors. ***MY SERVICE: I care about my clients and take their best interests to heart, obtain good value for their money in a home, and have a successful transaction. With honesty, integrity, and genuine concern, my clients know I will steer them right and protect their interests, whatever their goals are. When it comes to selling your home, I am an excellent negotiator and have vast marketing experience. I have strong relationships with my fellow Realtors and network everywhere. When you work with me, you can expect the highest level of professionalism combined with a quality person that is behind you. Also, you are working with whole Frank Liu’s Results Team. ***MY GOAL: As a local area expert with knowledge of the communities, my objective is to work diligently to assist you in meeting your real estate goals. If you are considering Buying or selling a home or would just like to have additional information about real estate in your area, Please don’t hesitate to call or email me. Also, Welcome any referral.

Li Xiao, San Jose CA Agent

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Work:

Realty World - SVI Group Inc.
San Jose, CA
(408)6878269 (Phone)
License #01407168

About:

As a full time professional real estate agent, I pride myself on offering superior personal service before, during and after your transaction. Knowledge, commitment, honesty, expertise and professionalism are the cornerstone of my business. Let me earn your trust, your business and most importantly your friendship. Don’t make another move without me. I guarantee you will see the difference quality service makes. I look forward to working with you!

Name / Title

Company / Classification

Phones & Addresses

Li Xiao
President

SHAW INVESTMENT & FINANCIAL SERVICES, INC

345 Anza St, Fremont, CA 94539

Li Ren Xiao

Li Xiao MD
Family Doctor · Internist

280 W Macarthur Blvd, Oakland, CA 94611
(510)7967796

Li Xiao
President

CALFIVE INTERNATIONAL INC

529 - 8 St #309, Oakland, CA 94607
529 8 St, Oakland, CA 94607

Li Xiao
President

LI XIAO, MD, A PROFESSIONAL CORPORATION

625 Amberfield Ter, Fremont, CA 94536

Us Patents

Increasing Peer Privacy
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US Patent:

7398388, Jul 8, 2008
Filed:

Feb 28, 2002
Appl. No.:

10/084436
Inventors:

Zhichen Xu - Sunnyvale CA, US
Li Xiao - Williamsburg VA, US
Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:

H04L 9/00
US Classification:

713163, 713153, 713171, 709239, 726 26, 380 30, 380278
Abstract:

In a method for increasing peer privacy, a request for a data is received from a data requester and the data is stored at a data provider. A plurality of peers are selected to form a path, where the data provider and the data requestor are the respective ends of the path. A mix is generated according to the path and the mix is transmitted to the data provider.

Increasing Peer Privacy
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US Patent:

7865715, Jan 4, 2011
Filed:

Feb 28, 2002
Appl. No.:

10/084499
Inventors:

Zhichen Xu - Sunnyvale CA, US
Li Xiao - Williamsburg VA, US
Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:

H04L 9/00
US Classification:

713153
Abstract:

In a method for increasing peer privacy, a path for information is formed from a provider to a requestor through a plurality of peers in response to a received request for the information. Each peer of the plurality of peers receives a respective set-up message comprising of a predetermined label and an identity of a next peer for the information. The information is transferred over the path in a message, where the message comprises a message label configured to determine a next peer according to the path in response to the message label matching the previously received predetermined label.

Self-Assembly Process For Memory Array
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US Patent:

8008213, Aug 30, 2011
Filed:

Sep 30, 2008
Appl. No.:

12/285220
Inventors:

Li Xiao - San Jose CA, US
Jingyan Zhang - Santa Clara CA, US
Huicai Zhong - Santa Clara CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438763, 438758, 438761, 365 51, 365158, 257E2917
Abstract:

A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.

Punch-Through Diode Steering Element
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US Patent:

8274130, Sep 25, 2012
Filed:

Oct 20, 2009
Appl. No.:

12/582509
Inventors:

Andrei Mihnea - San Jose CA, US
Deepak C. Sekar - Sunnyvale CA, US
George Samachisa - San Jose CA, US
Roy Scheuerlein - Cupertino CA, US
Li Xiao - San Jose CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

H01L 29/861
US Classification:

257497, 257209, 257530, 257E27111
Abstract:

A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.

Soft Forming Reversible Resistivity-Switching Element For Bipolar Switching
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US Patent:

8289749, Oct 16, 2012
Filed:

Dec 18, 2009
Appl. No.:

12/642191
Inventors:

Xiying Chen - San Jose CA, US
Abhijit Bandyopadhyay - San Jose CA, US
Brian Le - San Jose CA, US
Roy Scheuerlein - Cupertino CA, US
Li Xiao - San Jose CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

G11C 11/00
US Classification:

365148, 365158, 365189011, 36518916
Abstract:

A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is generally understood to refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. A first voltage is applied to “partially form” the reversible resistivity-switching element. The first voltage has a first polarity. Partially forming the reversible resistivity-switching element lowers the resistance of the reversible resistivity-switching element. A second voltage that has the opposite polarity as the first is then applied to the reversible resistivity-switching element. Application of the second voltage may further lower the resistance of the reversible resistivity-switching element. Therefore, the second voltage could be considered as completing the forming of the reversible resistivity-switching element.

Alternating Bipolar Forming Voltage For Resistivity-Switching Elements
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US Patent:

8385102, Feb 26, 2013
Filed:

Nov 18, 2010
Appl. No.:

12/949590
Inventors:

Li Xiao - San Jose CA, US
Abhijit Bandyopadhyay - San Jose CA, US
Tao Du - Palo Alto CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

G11C 11/00
US Classification:

365148, 365163
Abstract:

A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and may refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. The method may comprise alternating between applying one or more first voltages having a first polarity to the memory cell and applying one or more second voltages having a second polarity that is opposite the first polarity to the memory cell until the reversible resistivity-switching memory element is formed. There may be a rest period between applying the voltages of opposite polarity.

Resistive Random Access Memory With Low Current Operation
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US Patent:

8520425, Aug 27, 2013
Filed:

Mar 19, 2012
Appl. No.:

13/424131
Inventors:

Li Xiao - San Jose CA, US
Chandu Gorla - Sunnyvale CA, US
Abhijit Bandyopadhyay - San Jose CA, US
Andrei Mihnea - San Jose CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

G11C 11/00
G11C 13/0002
US Classification:

365148, 365158, 365163
Abstract:

A memory cell in a 3-D read and write memory device has two bipolar resistance-switching layers with different respective switching currents. A low current resistance-switching layer can be switched in set and reset processes while a high current resistance-switching layer remains in a reset state and acts as a protection resistor to prevent excessively high currents on the low current resistance-switching layer. The low and high current resistance-switching layers can be of the same material such as a metal oxide, where the layers differ in terms of thickness, doping, leakiness, metal richness or other variables. Or, the low and high current resistance-switching layers can be of different materials, having one or more layers each. The high current resistance-switching layer can have a switching current which is greater than a switching current of the low current resistance-switching layer by a factor of at least 1. 5 or 2. 0, for instance.

Punch-Through Diode Steering Element
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US Patent:

8575715, Nov 5, 2013
Filed:

Aug 9, 2012
Appl. No.:

13/571100
Inventors:

Andrei Mihnea - San Jose CA, US
Deepak C. Sekar - Sunnyvale CA, US
George Samachisa - San Jose CA, US
Roy Scheuerlein - Cupertino CA, US
Li Xiao - San Jose CA, US
Assignee:

SanDisk 3D LLC - Milpitas CA
International Classification:

H01L 29/66
US Classification:

257497, 257209, 257530, 257E27111
Abstract:

A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.

Resumes

Li Xiao

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Li Xiao

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Li Xiao

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Li Xiao

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Li Hui Zhang Xiao

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Li Xiao

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Clerk

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Position:

Clerk at ZI-ARGUS

Location:

San Francisco Bay Area

Industry:

E-Learning

Work:

ZI-ARGUS since Jan 2000
Clerk

Senior Analyst, Strategy And Corporate Development

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Position:

Senior Analyst, Strategy and Corporate Development at Analogic Corporation

Location:

Peabody, Massachusetts

Industry:

Medical Devices

Work:

Analogic Corporation since Jul 2010
Senior Analyst, Strategy and Corporate Development
Analogic May 2009 - May 2010
Strategic Marketing Intern
Armstrong Pharmaceuticals Jun 2006 - Jun 2007
QC Chemist
Grace Semiconductor Manfacturing Corporation Jul 2003 - Nov 2005
Senior QC Engineer

Education:

Babson College - Franklin W. Olin Graduate School of Business 2008 - 2010
MBA Shandong University 2000 - 2003
MS, Physical Chemistry Shandong University 1996 - 2000
BS, Chemistry