Lin L Zhou

US Patent:

7532867, May 12, 2009

Filed:

Mar 15, 2006

Appl. No.:

11/377695

Inventors:

Shih Mo - Milpitas CA, US
Junjie Yang - Santa Clara CA, US
Lin Zhou - Milpitas CA, US
Chung-Hsing Chang - Milpitas CA, US
Ted Hsiung - Saratoga CA, US

International Classification:

H04B 1/44
H04Q 7/20

US Classification:

455 78, 4551274, 4555521

Abstract:

Transceiver architectures for supporting multi-band radio frequencies are disclosed. According to one aspect of the present invention, a number of processing channels are designed, each for one specified carrier frequency. A number of switching means is provided to ensure that a processing channel is properly selected for a specified carrier frequency. Each of the processing channels includes at least an amplified and a low-pass filter, where the low-pass filter is automatically programmable in response to a wireless standard (e. g. , Wi-Fi or WiMAX). A single voltage oscillator (VCO) is used to support operations of each of the processing channels.

US Patent:

20080258817, Oct 23, 2008

Filed:

Apr 17, 2007

Appl. No.:

11/736446

Inventors:

Lin Zhou - Chapel Hill NC, US
Shih Mo - Milpitas CA, US

Assignee:

RedDot Wireless Inc. - Milpitas CA

International Classification:

H03G 3/10

US Classification:

330279, 330278, 330285

Abstract:

The present invention provides a system and method for operating hybrid concurrent and switched dual-band low noise amplifiers. Embodiments use a concurrent design at the input block of a hybrid LNA to advantageously achieve better impedance matching while using a switch capacitor design at the output block to advantageously achieve a better gain than typical concurrent multiband LNAs. Embodiments might be integrated into wireless devices configured to simultaneously receive on multiple frequency bands while providing gains of 30 dB or more by combining the advantages of concurrent multiband LNAs with the advantages of switched multiband LNAs. In addition to the higher gains provided by embodiments of the hybrid LNA described herein, hybrid multiband LNAs according to embodiments of the present invention provide a smaller device footprint and power requirements than would be required for a receiver including multiple single-band LNAs for amplifying signals for each frequency band individually.

US Patent:

20080258821, Oct 23, 2008

Filed:

Apr 17, 2007

Appl. No.:

11/736450

Inventors:

Lin Zhou - Chapel Hill NC, US

Assignee:

RedDot Wireless Inc. - Milpitas CA

International Classification:

H03F 3/04

US Classification:

330310, 330133

Abstract:

Methods and systems for amplifying signals are provided. Embodiments include a three-to-one multiplexer, a multiband RF variable gain amplifier (VGA), a multiband power amplifier driver (PAD), and a one-to three multiplexer. The three-to-one multiplexer receives three input signals from an RF frequency source and outputs an output signal corresponding one input signal. The multiband RF VGA receives the output signal of the three-to-one multiplexer, provides a first level of amplification to the signal received from the three-to-one multiplexer, and outputs an amplified version of the signal. The multiband PAD receives the signal output by the multiband RF variable gain amplifier and provides a second level of amplification to the signal and outputs an amplified version of the signal. The one-to-three multiplexer receives a signal output by the multiband PAD produces three output signals that correspond to each of the three input signals.

US Patent:

60105380, Jan 4, 2000

Filed:

Jan 11, 1996

Appl. No.:

8/585164

Inventors:

Mei H. Sun - Los Altos CA
Herbert E. Litvak - Cupertino CA
Huey M. Tzeng - San Jose CA
Daniel E. Glenn - Mountain View CA
Earl M. Jensen - Sunnyvale CA
Frank J. Hausman - San Francisco CA
Lin Jun Zhou - Palo Alto CA

Assignee:

Luxtron Corporation - Santa Clara CA

International Classification:

H05K 304
B24B 704

US Classification:

756345

Abstract:

In an apparatus for removing material from an article, such as an exposed surface of an intermediate integrated circuit structure, by planarizing, polishing, etching or the like, a sensor is mechanically coupled to a moving carrier of the article for directing through the article to its first side an electromagnetic radiation beam having a wavelength band to which the structure is substantially transparent. The beam is detected after interacting with the article, such as being reflected from its exposed surface, and resulting information of the state of the processing of the exposed surface is transmitted from the moving carrier to a stationary receiver by radiation without the use of any physical transmission media such as wires or optical fibers. Multiple sensors mounted on the moving article carrier provide information of the uniformity of the processing across the exposed article surface. The radiation signal received by the stationary receiver is used to monitor or control the processing, such as by determining an endpoint thereof.

US Patent:

20200357639, Nov 12, 2020

Filed:

Jul 30, 2020

Appl. No.:

16/944051

Inventors:

- Santa Clara CA, US
Steven R. Sherman - Newton MA, US
Nadine Alexis - Santa Clara CA, US
Lin Zhou - San Jose CA, US

Assignee:

APPLIED Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/033
H01L 21/311

Abstract:

Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.

US Patent:

20200294802, Sep 17, 2020

Filed:

Jun 21, 2019

Appl. No.:

16/448374

Inventors:

- Santa Clara CA, US
Steven R. Sherman - Newton MA, US
Nadine Alexis - Santa Clara CA, US
Lin Zhou - San Jose CA, US

Assignee:

APPLIED Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/033
H01L 21/311

Abstract:

Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.

US Patent:

20190348279, Nov 14, 2019

Filed:

May 9, 2018

Appl. No.:

15/975408

Inventors:

- Santa Clara CA, US
Lin ZHOU - Santa Clara CA, US

International Classification:

H01L 21/027
H01L 21/311
H01L 21/3213
C23C 16/455
H01L 21/683

Abstract:

Methods for patterning a film stack are provided. In one embodiment, a method for patterning a film stack disposed on a substrate includes performing a first etching process to etch a film stack disposed on a substrate, wherein the film stack includes a patterned photoresist layer disposed on an upper layer on a lower layer disposed on the substrate, wherein the patterned photoresist layer comprises openings defined between features and the features have a first pitch, wherein the first etching process removes between about 40 percent and about 95 percent of the lower layer exposed by the patterned photoresist layer from the film stack, performing a second etching process on the film stack, and upon completion of the second etching process, transferring the features into the upper or lower layer in the film stack having a second pitch, wherein the second pitch is shorter than the first pitch.