Lin L Zhou

US Patent:

20200357639, Nov 12, 2020

Filed:

Jul 30, 2020

Appl. No.:

16/944051

Inventors:

- Santa Clara CA, US
Steven R. Sherman - Newton MA, US
Nadine Alexis - Santa Clara CA, US
Lin Zhou - San Jose CA, US

Assignee:

APPLIED Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/033
H01L 21/311

Abstract:

Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.

US Patent:

20200294802, Sep 17, 2020

Filed:

Jun 21, 2019

Appl. No.:

16/448374

Inventors:

- Santa Clara CA, US
Steven R. Sherman - Newton MA, US
Nadine Alexis - Santa Clara CA, US
Lin Zhou - San Jose CA, US

Assignee:

APPLIED Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/033
H01L 21/311

Abstract:

Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.