Ling Zhou

US Patent:

7501295, Mar 10, 2009

Filed:

May 25, 2006

Appl. No.:

11/420337

Inventors:

Ling Zhou - Dublin CA, US

Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA

International Classification:

H01L 21/00
H01L 33/00

US Classification:

438 29, 438530, 438627, 438653, 257 98, 257432, 257E31127

Abstract:

A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.

US Patent:

7612384, Nov 3, 2009

Filed:

Jan 29, 2009

Appl. No.:

12/361568

Inventors:

Ling Zhou - Dublin CA, US

Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA

International Classification:

H01L 33/00
H01L 21/00

US Classification:

257 98, 257432, 257E31127, 438 29, 438530, 438627

Abstract:

A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.

US Patent:

7754507, Jul 13, 2010

Filed:

Jun 9, 2005

Appl. No.:

11/149679

Inventors:

John E. Epler - San Jose CA, US
Oleg B. Shchekin - San Francisco CA, US
Ling Zhou - Dublin CA, US

International Classification:

H01L 21/00

US Classification:

438 26, 257E21511

Abstract:

A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

US Patent:

20120279503, Nov 8, 2012

Filed:

Sep 12, 2011

Appl. No.:

13/230262

Inventors:

Ling Zhou - Dublin CA, US
Ying Gao - Beijing, CN

International Classification:

A62B 18/02

US Classification:

12820527

Abstract:

A breathing apparatus according to embodiments of the invention includes a facemask portion sized to cover a lower portion of a wearer's face. The facemask portion includes a flow chamber defined by a support layer and a cover. The flow chamber has a first opening disposed near a first end of the flow chamber and a second opening disposed near a second end of the flow chamber. At least one light emitting diode configured to emit light having a peak wavelength in the ultraviolet range is disposed between the first opening and the second opening in the flow chamber.

US Patent:

20130104579, May 2, 2013

Filed:

Oct 29, 2012

Appl. No.:

13/662711

Inventors:

QINGDAO JASON ELECTRIC CO. LTD. - Qingdao City, CN
Ling Zhou - Dublin CA, US

Assignee:

QINGDAO JASON ELECTRIC CO. LTD. - Qingdao City

International Classification:

F25D 27/00
F25D 17/06

US Classification:

62 89, 62264, 62 56

Abstract:

Embodiments of the invention include a sealed compartment and a door disposed on a side of the sealed compartment, and a cooler for cooling an interior of the sealed compartment. At least one light emitting diode configured to emit light having a peak wavelength in the ultraviolet range is positioned to emit ultraviolet light in the sealed compartment.

US Patent:

6586328, Jul 1, 2003

Filed:

Jun 5, 2000

Appl. No.:

09/586910

Inventors:

Ilesanmi Adesida - Champaign IL
Ling Zhou - Urbana IL

Assignee:

The Board of Trustees of the University of Illinois - Urbana IL

International Classification:

H01L 214763

US Classification:

438628, 438 46, 438513, 438604, 438796

Abstract:

The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination or oxides. A high work function metal is then formed on the oxide-forming layer. An anneal is conducted to diffuse the high work function on metal through the oxide-forming layer. One or more metal cap layers may top the high work function metal to protect the high work function metal.

US Patent:

20220328729, Oct 13, 2022

Filed:

Apr 12, 2021

Appl. No.:

17/228490

Inventors:

- SAN JOSE CA, US
LING ZHOU - SAN JOSE CA, US
Jianping Zhang - SAN JOSE CA, US
Ying Gao - SAN JOSE CA, US
Huazhong Deng - SAN JOSE CA, US

International Classification:

H01L 33/48
H01L 33/56
H01L 33/62
H01L 33/58

Abstract:

An UV or DUV light-emitting diode package includes: a foundation; a first metal layer, a second metal layer, and third metal layer formed on a top surface of the foundation, wherein the first metal layer and the second metal layer are electrically isolated by a first gap, the third metal layer surrounds the first and second metal layers and is electrically isolated from the first and second metal layers by a second gap; a lens attached to the top surface of the foundation, wherein a cavity is formed between the foundation and the lens; a chip disposed in the cavity, wherein an anode of the chip is electrically connected to the first metal layer and a cathode of the chip is electrically connected to the second metal layer; and a fluid encapsulate, wherein the cavity is fully or partially filled with the fluid encapsulate.

US Patent:

20220290851, Sep 15, 2022

Filed:

Mar 10, 2021

Appl. No.:

17/197721

Inventors:

- SAN JOSE CA, US
LING ZHOU - SAN JOSE CA, US
Ying Gao - SAN JOSE CA, US
Huazhong Deng - SAN JOSE CA, US
Alex Lunev - SAN JOSE CA, US
Cuong Le - SAN JOSE CA, US

International Classification:

F21V 29/60
F21V 7/04
F21V 29/51
F21V 29/76
H01L 25/075
H01L 33/48
H01L 33/62
H01L 33/58

Abstract:

A DUV light source module includes a print circuit board, an array of DUV light-emitting diodes (LEDs), a plurality of DUV LED drivers for driving the DUV light-emitting diodes, and a pair of electrical connectors for connecting the DUV LED drivers hence the DUV light-emitting diodes to a power source, and A DUV light source device includes the DUV light source module, a reflector, a heat sink, a heat pipe, a radiator and a fan.