Ling Zhou

US Patent:

6713038, Mar 30, 2004

Filed:

Apr 10, 2001

Appl. No.:

09/829616

Inventors:

Ling Zhou - Severna Park MD
Thomas Messer - Columbia MD
Mark Banash - Hanover MD

Assignee:

Millenium Inorganic Chemicals, Inc. - Hunt Valley MD

International Classification:

C01G 23047

US Classification:

423610, 423 85, 423 69, 241 14, 241 15, 241 20

Abstract:

A titanium dioxide compound was isolated from a rare type of naturally occurring ore. Processes for efficiently isolating and obtaining these TiO compounds, as well as methods for using them have been developed. These TiO compounds may be used directly in applications such as paper, plastics and paints without being subjected to the chloride or sulfate processes. Also they made be used as a feedstock for the chloride or sulfate processes. In order to obtain these TiO compounds, one may grind or pulverize the naturally occurring ore, disperse it in a solution or suspension, and process it by selective flocculation or aqueous biphasic extraction.

US Patent:

6955703, Oct 18, 2005

Filed:

Dec 26, 2002

Appl. No.:

10/329721

Inventors:

Ling Zhou - Severna Park MD, US
Frederick E. L. Schneider, Jr. - Baltimore MD, US
Robert J. Daniels - Phoenix MD, US
Thomas Messer - Columbia MD, US
Jon Philip R. Peeling - Finksburg MD, US

Assignee:

Millennium Inorganic Chemicals, Inc. - Hunt Valley MD

International Classification:

B22F009/28

US Classification:

75351, 75366, 75617, 75619, 75620

Abstract:

The present invention relates to a process for the production of an elemental material, comprising the step of reacting a halide of the elemental material with a reducing agent in solid form in a fluidized bed reactor at a reaction temperature which is below the melting temperature of the reducing agent. In a preferred embodiment of the present invention, the elemental material is titanium and the titanium is produced in powder form. The invention also relates to the production of alloys or intermetallics of the elemental materials.

US Patent:

7501295, Mar 10, 2009

Filed:

May 25, 2006

Appl. No.:

11/420337

Inventors:

Ling Zhou - Dublin CA, US

Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA

International Classification:

H01L 21/00
H01L 33/00

US Classification:

438 29, 438530, 438627, 438653, 257 98, 257432, 257E31127

Abstract:

A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.

US Patent:

7612384, Nov 3, 2009

Filed:

Jan 29, 2009

Appl. No.:

12/361568

Inventors:

Ling Zhou - Dublin CA, US

Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA

International Classification:

H01L 33/00
H01L 21/00

US Classification:

257 98, 257432, 257E31127, 438 29, 438530, 438627

Abstract:

A process is disclosed for forming a reflective electrode on a semiconductor light emitting device, the light emitting device having an active layer for generating light and a cladding layer in electrical contact with the active layer. The process involves depositing an intermediate layer of electrically conductive material on the cladding layer and causing at least a portion of the electrically conductive material to diffuse into the cladding layer. The process further involves depositing a reflective layer on the intermediate layer, the reflective layer being electrically conductive and in electrical contact with the intermediate layer.

US Patent:

7754507, Jul 13, 2010

Filed:

Jun 9, 2005

Appl. No.:

11/149679

Inventors:

John E. Epler - San Jose CA, US
Oleg B. Shchekin - San Francisco CA, US
Ling Zhou - Dublin CA, US

International Classification:

H01L 21/00

US Classification:

438 26, 257E21511

Abstract:

A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

US Patent:

20040261573, Dec 30, 2004

Filed:

Jul 20, 2004

Appl. No.:

10/894799

Inventors:

Ling Zhou - Severna Park MD, US
Frederick Schneider - Baltimore MD, US
Robert Daniels - Phoenix MD, US
Thomas Messer - Columbia MD, US
Jon Peeling - Finksburg MD, US

Assignee:

Millenium Inorganic Chemicals, Inc. - Hunt Valley MD

International Classification:

B22F009/20

US Classification:

075/351000, 075/369000

Abstract:

The present invention relates to a process for the production of an elemental material, comprising the step of reacting a halide of the elemental material with a reducing agent in solid form in a fluidized bed reactor at a reaction temperature which is below the melting temperature of the reducing agent. In a preferred embodiment of the present invention, the elemental material is titanium and the titanium is produced in powder form. The invention also relates to the production of alloys or intermetallics of the elemental materials.

US Patent:

20080025909, Jan 31, 2008

Filed:

Jul 21, 2006

Appl. No.:

11/491335

Inventors:

Ling Zhou - Severna Park MD, US
Frederick E. Schneider - Baltimore MD, US

International Classification:

C01G 23/02

US Classification:

423492

Abstract:

The invention is a continuous process for producing titanium tetrachloride having a vanadium content of less than 5 ppm.

US Patent:

20100129278, May 27, 2010

Filed:

May 15, 2009

Appl. No.:

12/466788

Inventors:

Ling Zhou - Severna Park MD, US
Frederick E. Schneider - Baltimore MD, US
Rodney A. Hagins - Pasadena MD, US

International Classification:

C01G 23/02

US Classification:

423 69

Abstract:

An improved continuous process for producing titanium tetrachloride having a vanadium content of less than 5 ppm using on-line monitoring of vanadium oxytrichloride in crude titanium tetrachloride with effective anti-fouling management of precipitated niobium oxytrichloride.