Manish A Sharma

US Patent:

6480825, Nov 12, 2002

Filed:

Jan 29, 1998

Appl. No.:

09/015393

Inventors:

Manish Sharma - Somerset NJ
Richard J. Mammone - Bridgewater NJ

Assignee:

T-NETIX, Inc. - Dallas TX

International Classification:

G01L 1700

US Classification:

704270, 704273, 704275, 379 67, 379 88

Abstract:

The present invention is a reliable system and method for detecting a recorded voice, which can be employed independently or to provide protection from fraudulent use of a recording to defeat an automatic speaker recognition system. Several techniques and systems are employed either independently or in combination to verify that a detected audio sample is live and not recorded. Temporal speech characteristics of an audio sample are analyzed to determine whether a sample under examination is so similar to a previous sample as to indicate a recording. Communications channel characteristics are examined to determine whether an sample was recorded on a different channel from a predetermined communications channel. A pattern classifier is trained to distinguish between live and recorded speech. Finally, an âaudio watermarkâ is used to determine whether a detected audio sample is a recording of a previous communication by an authorized user.

US Patent:

6507513, Jan 14, 2003

Filed:

Jun 20, 2002

Appl. No.:

10/176179

Inventors:

Manish Sharma - Mountain View CA
Manoj Bhattacharyya - Cupertino CA
Lung The Tran - Saratoga CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

G11C 1114

US Classification:

365158, 365173, 365171, 365 51, 365194, 365191

Abstract:

A device having a magneto-resistive element, a first conductor proximate to the magneto-resistive element, and a second conductor proximate to the magneto-resistive element. The magneto-resistive element is exposed to a magnetic field generated by a first electrical pulse carried by the first conductor. The magneto-resistive element is also exposed to a magnetic field generated by a second electrical pulse carried by the second conductor. The second electrical pulse is delayed relative to the first electrical pulse.

US Patent:

6667901, Dec 23, 2003

Filed:

Apr 29, 2003

Appl. No.:

10/426381

Inventors:

Frederick A. Perner - Palo Alto CA
Manish Sharma - Sunnyvale CA
Manoj Bhattacharyya - Cupertino CA

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 1115

US Classification:

365173, 365171, 365158, 365190, 36518907

Abstract:

A magnetic memory device includes a first magnetic tunnel junction having a first reference ferromagnetic layer; a second magnetic tunnel junction having a second reference ferromagnetic layer; and an electrically conductive spacer layer between the first and second reference layers. The first and second reference layers are antiferromagnetically coupled.

US Patent:

6693825, Feb 17, 2004

Filed:

Jan 23, 2003

Appl. No.:

10/349685

Inventors:

Manish Sharma - Mountain View CA
Thomas C. Anthony - Sunnyvale CA
Lung T. Tran - Saratoga CA

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 1100

US Classification:

365158, 365171

Abstract:

A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.

US Patent:

6738543, May 18, 2004

Filed:

May 30, 2002

Appl. No.:

10/160383

Inventors:

Karl W. Beeson - Princeton NJ
Lawrence W. Shacklette - Maplewood NJ
Manish Sharma - Princeton NJ
Han Zou - Windsor NJ

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G02B 626

US Classification:

385 27, 385 10, 385 16, 385 37

Abstract:

A hitless wavelength selective optical device includes a first thermo-optic switch (TOS), a second TOS, a first waveguide, a second waveguide, a third waveguide, a heating element and a control unit. The first TOS includes receives a wavelength division multiplexed (WDM) signal at a first port of the first TOS. The second TOS provides at least one channel of the WDM signal at a first port of the second TOS. The first waveguide is coupled between second ports of the first and second TOS. The second waveguide includes a tunable filter that reflects a selected channel from the received WDM signal and coupled between the third ports of the first and second TOS.

US Patent:

6740948, May 25, 2004

Filed:

Aug 30, 2002

Appl. No.:

10/233110

Inventors:

Manish Sharma - Mountain View CA
Manoj Bhattacharyya - Cupertino CA

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 2982

US Classification:

257422, 257E27006

Abstract:

A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.

US Patent:

6785160, Aug 31, 2004

Filed:

Apr 29, 2003

Appl. No.:

10/425352

Inventors:

Manish Sharma - Mountain View CA
Manoj K. Bhattacharyya - Cupertino CA

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 1100

US Classification:

365158, 365171, 365173

Abstract:

The invention includes a method of providing magnetic stability of a memory cell. The memory cell is generally located proximate to a conductive line, and proximate to a write mechanism that can set a magnetic state of the memory cell. The method includes receiving a representation of a maximum magnetic field intensity available from the write mechanism. A desirable placement of the memory cell relative to the conductive line can be generated for providing stability of the memory cell, while still allowing the write mechanism to change the magnetic state of the memory cell.

US Patent:

6788605, Sep 7, 2004

Filed:

Jul 15, 2002

Appl. No.:

10/195818

Inventors:

Manish Sharma - Mountain View CA
Frederick Perner - Palo Alto CA

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G11C 700

US Classification:

365220, 365149, 365158, 36518904

Abstract:

The invention includes an apparatus and a method that provides a memory back-up system. The memory back-up system includes a first memory cell, and a non-volatile memory cell that is interfaced to the first memory cell. Control circuitry allows data to be written to either the first memory cell or the non-volatile memory cell, and provides transfer of the data from either the first memory cell or the non-volatile memory cell, to the other of either the first memory cell or the non-volatile memory cell. The memory back-up system can also include a plurality of first memory cells, and a plurality of non-volatile memory cells that are interfaced to the first memory cells. Control circuitry allows data to be written to either the first memory cells or the non-volatile memory cells, and that provides transfer of the data from either the first memory cells or the non-volatile memory cells, to the other of either the first memory cells or the non-volatile memory cells.