Mathew C Abraham

US Patent:

20110117680, May 19, 2011

Filed:

Nov 17, 2010

Appl. No.:

12/948089

Inventors:

Vicky SVIDENKO - San Jose CA, US
Mathew ABRAHAM - Mountain View CA, US
Serkan KINCAL - Atherton CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/66

US Classification:

438 7, 257E21528

Abstract:

Embodiments of the present invention generally provide a method for detecting the position of a substrate within a processing chamber. Embodiments of the present invention are particularly useful for the detection of a mis-positioned solar cell substrate during photoabsorber layer deposition processes within a solar cell production line. Reflected power is measured during processing of a substrate and communicated to a system controller. The system controller compares the measured reflected power with an established range of reflected power. If the measured reflected power is substantially out of range, the system controller signals for the chamber to be taken offline for inspection, maintenance, and/or repair. The system controller may further divert the flow of substrates within the production line around the offline chamber without shutting down the entire solar cell production line.

US Patent:

20130260555, Oct 3, 2013

Filed:

Mar 6, 2013

Appl. No.:

13/786644

Inventors:

Bhushan N. ZOPE - Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang-Ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/48

US Classification:

438660

Abstract:

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

US Patent:

20140004689, Jan 2, 2014

Filed:

Jun 13, 2013

Appl. No.:

13/917039

Inventors:

Aneesh Nainani - Palo Alto CA, US
Mathew Abraham - Mountain View CA, US
Er-Xuan Ping - Fremont CA, US

International Classification:

H01L 21/225

US Classification:

438559

Abstract:

Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

US Patent:

20210392733, Dec 16, 2021

Filed:

Oct 25, 2019

Appl. No.:

17/284060

Inventors:

- Veldhoven, NL
Georgiy Olegovich Vaschenko - San Diego CA, US
Chirag Rajyaguru - San Diego CA, US
Alexander Igorevich Ershov - Escondido CA, US
Joshua Mark Lukens - San Diego CA, US
Mathew Cheeran Abraham - San Diego CA, US

International Classification:

H05G 2/00

Abstract:

Disclosed is a system for generating EUV radiation in which current flowing through target material in the orifice of a nozzle in a droplet generator is controlled by providing alternate lower impedance paths for the current and/or by limiting a high frequency component of a drive signal applied to the droplet generator.

US Patent:

20200037428, Jan 30, 2020

Filed:

Oct 7, 2019

Appl. No.:

16/594995

Inventors:

- Veldhoven, NL
Mathew Cheeran ABRAHAM - San Diego CA, US
David Robert EVANS - San Diego CA, US
Jack Michael GAZZA - San Diego CA, US

International Classification:

H05G 2/00
G03F 7/20
G02B 19/00
G02B 27/00

Abstract:

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

US Patent:

20190289704, Sep 19, 2019

Filed:

Jun 7, 2019

Appl. No.:

16/434367

Inventors:

- Veldhoven, NL
Mathew Cheeran ABRAHAM - San Diego CA, US
David Robert EVANS - San Diego CA, US
Jack Michael GAZZA - San Diego CA, US

International Classification:

H05G 2/00
G03F 7/20
G02B 19/00
G02B 27/00

Abstract:

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

US Patent:

20180160517, Jun 7, 2018

Filed:

Feb 2, 2018

Appl. No.:

15/887935

Inventors:

- Veldhoven, NL
Mathew Cheeran Abraham - San Diego CA, US
David Robert Evans - San Diego CA, US
Jack Michael Gazza - San Diego CA, US

International Classification:

H05G 2/00
G02B 19/00
G03F 7/20

Abstract:

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

US Patent:

20180068890, Mar 8, 2018

Filed:

Nov 13, 2017

Appl. No.:

15/811647

Inventors:

- Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang-Ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/768
H01L 23/532
H01L 21/02
H01L 21/48
H01L 21/285
H01L 29/66

Abstract:

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.