Mathew C Abraham

US Patent:

20110117680, May 19, 2011

Filed:

Nov 17, 2010

Appl. No.:

12/948089

Inventors:

Vicky SVIDENKO - San Jose CA, US
Mathew ABRAHAM - Mountain View CA, US
Serkan KINCAL - Atherton CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/66

US Classification:

438 7, 257E21528

Abstract:

Embodiments of the present invention generally provide a method for detecting the position of a substrate within a processing chamber. Embodiments of the present invention are particularly useful for the detection of a mis-positioned solar cell substrate during photoabsorber layer deposition processes within a solar cell production line. Reflected power is measured during processing of a substrate and communicated to a system controller. The system controller compares the measured reflected power with an established range of reflected power. If the measured reflected power is substantially out of range, the system controller signals for the chamber to be taken offline for inspection, maintenance, and/or repair. The system controller may further divert the flow of substrates within the production line around the offline chamber without shutting down the entire solar cell production line.

US Patent:

20130260555, Oct 3, 2013

Filed:

Mar 6, 2013

Appl. No.:

13/786644

Inventors:

Bhushan N. ZOPE - Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang-Ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/48

US Classification:

438660

Abstract:

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

US Patent:

20140004689, Jan 2, 2014

Filed:

Jun 13, 2013

Appl. No.:

13/917039

Inventors:

Aneesh Nainani - Palo Alto CA, US
Mathew Abraham - Mountain View CA, US
Er-Xuan Ping - Fremont CA, US

International Classification:

H01L 21/225

US Classification:

438559

Abstract:

Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

US Patent:

20180068890, Mar 8, 2018

Filed:

Nov 13, 2017

Appl. No.:

15/811647

Inventors:

- Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang-Ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/768
H01L 23/532
H01L 21/02
H01L 21/48
H01L 21/285
H01L 29/66

Abstract:

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

US Patent:

20170084486, Mar 23, 2017

Filed:

Nov 30, 2016

Appl. No.:

15/364780

Inventors:

- Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang Ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/768
H01L 21/285

Abstract:

Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

US Patent:

20160247718, Aug 25, 2016

Filed:

May 3, 2016

Appl. No.:

15/145578

Inventors:

- Santa Clara CA, US
Avgerinos V. GELATOS - Redwood City CA, US
Bo ZHENG - Saratoga CA, US
Yu LEI - Belmont CA, US
Xinyu FU - Pleasanton CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Sang-ho YU - Cupertino CA, US
Mathew ABRAHAM - Mountain View CA, US

International Classification:

H01L 21/768
H01L 23/532
H01L 21/02

Abstract:

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

US Patent:

20160079064, Mar 17, 2016

Filed:

Nov 12, 2015

Appl. No.:

14/939403

Inventors:

- Santa Clara CA, US
Mathew Abraham - Mountain View CA, US
Er-Xuan Ping - Fremont CA, US

International Classification:

H01L 21/225
H01L 21/02

Abstract:

Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

US Patent:

20150093862, Apr 2, 2015

Filed:

Oct 28, 2013

Appl. No.:

14/064933

Inventors:

- Santa Clara CA, US
Bhushan N. Zope - Santa Clara CA, US
Leonid Dorf - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Adam Brand - Palo Alto CA, US
Mathew Abraham - Mountain View CA, US
Subhash Deshmukh - North Andover MA, US

Assignee:

APPLIED MATEIRALS, INC. - Santa Clara CA

International Classification:

H01L 21/02
H01L 21/768
H01L 29/66

US Classification:

438197, 438666

Abstract:

An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.