Michael C Huang

US Patent:

6882051, Apr 19, 2005

Filed:

Mar 29, 2002

Appl. No.:

10/112578

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L023/48

US Classification:

257746, 257741, 257734

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

7304781, Dec 4, 2007

Filed:

Jun 29, 2006

Appl. No.:

11/479986

Inventors:

Connie J. Chang-Hasnain - Palo Alto CA, US
Carlos Fernando Rondina Mateus - San Jose De Campos, BR
Michael Chung-Yi Huang - Berkeley CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

G02F 1/07

US Classification:

359260, 359245, 359238

Abstract:

A sub-wavelength grating structure that has a very broad reflection spectrum and very high reflectivity comprising segments made of high refractive index material disposed on a layer of low refractive index material and a low refractive index material disposed above and between the segments. The index differential between the high and low index materials determines the bandwidth and modulation depth. The larger difference in refractive indices gives rise to wider reflection bands. The reflection is sensitive to parameters such as the grating period, the grating thickness, the duty cycle of the grating, the refractive index and the thickness of the low index layer underneath the grating. The design is scalable for different wavelengths, and facilitates monolithic integration of optoelectronic devices at a wide range of wavelengths from visible to far infrared. The sub-wavelength grating reflectors may be used in a variety of settings such as tunable etalon filters and as a replacement for conventional distributed Bragg reflectors.

US Patent:

7472803, Jan 6, 2009

Filed:

Feb 25, 2005

Appl. No.:

11/067657

Inventors:

Krishan L. Kalra - Danville CA, US
Thomas Maxwell - Danville CA, US
Qi Cao - San Leandro CA, US
Michael Huang - San Ramon CA, US
Shahin Iqbal - Danville CA, US

Assignee:

BioGenex Laboratories, Inc. - San Ramon CA

International Classification:

B65G 59/06

US Classification:

221257, 221256, 221263

Abstract:

An automated dispensing assembly includes a base, and a shuttle mounted in the base and movable under automated control between a loading position and a dispensing position. The shuttle includes a cavity configured to carry an object, such as cover. The depth of the cavity in the shuttle is approximately the same (or less) as the thickness of one of the objects. A storage module is mounted proximate the shuttle. The storage module is configured to store a plurality of objects and includes an opening exposing the next object to be dispensed. The cavity is positioned adjacent the opening in the storage module in the loading position and an edge of the cavity separates the object to be dispensed from the other objects in the storage module as the shuttle moves to the dispensing position.

US Patent:

7834264, Nov 16, 2010

Filed:

Dec 22, 2006

Appl. No.:

11/645236

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 35/00
H01L 35/02
H01L 35/12

US Classification:

136230, 136203, 136205, 1362361

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

US Patent:

D667631, Sep 25, 2012

Filed:

Dec 9, 2011

Appl. No.:

29/408337

Inventors:

Kenneth Y Minn - San Francisco CA, US
David E Yao - San Francisco CA, US
Michael C Huang - San Francisco CA, US

Assignee:

Kenu - San Francisco CA

International Classification:

0301

US Classification:

D 3218

US Patent:

D674593, Jan 22, 2013

Filed:

Aug 7, 2012

Appl. No.:

29/429059

Inventors:

Kenneth Y Minn - San Francisco CA, US
David E Yao - San Francisco CA, US
Michael C Huang - San Francisco CA, US

Assignee:

Kenu - San Francisco CA

International Classification:

0301

US Classification:

D 3218

US Patent:

20070153860, Jul 5, 2007

Filed:

May 19, 2006

Appl. No.:

11/438480

Inventors:

Connie Chang-Hasnain - Palo Alto CA, US
Michael Huang - Berkeley CA, US
Ye Zhou - Berkeley CA, US
Carlos Mateus - Sao Jose De Campos-Sp, BR

International Classification:

H01S 5/00
G02B 27/42
G02B 5/18

US Classification:

372050124, 359558000

Abstract:

A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

US Patent:

20100003516, Jan 7, 2010

Filed:

Jun 19, 2009

Appl. No.:

12/488310

Inventors:

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakand CA

International Classification:

B32B 5/02
B32B 9/00
B32B 15/00

US Classification:

428368, 428375, 428389, 977762

Abstract:

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).