Ming Jiang

US Patent:

6984613, Jan 10, 2006

Filed:

Aug 31, 2004

Appl. No.:

10/931385

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Nick Lara - Gilroy CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

C11D 17/00

US Classification:

510175, 510176, 510488, 510499, 134 13, 134 2, 438689, 438691, 451 28, 451 36

Abstract:

The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (HO). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0. 1% to 10% by volume of the cleaning solution.

US Patent:

7029376, Apr 18, 2006

Filed:

Sep 14, 2005

Appl. No.:

11/225907

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Jyh-Shuey Lo - San Jose CA, US
Hong Zhang - Fremont CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127

US Classification:

451 41, 2960315, 2960316, 360122

Abstract:

In the formation of the top magnetic write pole in a thin film magnetic recording head, a CMP stop layer comprising rhodium is deposited over the AlOlayer that overlies the top magnetic pole. A mixture of silicon dioxide, ammonium persulfate and benzotriazole is employed as a slurry in the CMP process that removes the portion of the AlOlayer covering the top magnetic pole. This eliminates the need for an extra thick layer of AlOto be first deposited over the top pole and then removed to expose the top pole. The magnetic layer that forms the top pole can be plated to the target thickness of the top pole. As a result, the thickness of the photoresist layer that is used to define the size and shape of the top pole can be decreased to a desirable thickness, facilitating the use of DUV radiation to expose the photoresist layer.

US Patent:

7081041, Jul 25, 2006

Filed:

Feb 28, 2005

Appl. No.:

11/067913

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127

US Classification:

451 28, 216 22, 216 38

Abstract:

A method for forming a write head top pole using chemical mechanical polishing with a diamond-like-carbon (DLC) polishing stop layer is disclosed. The method for providing a top pole of a write head includes forming a P pole tip, depositing a P filling layer to a P target thickness, wherein the P filling layer around the P pole tip is filled to a P target thickness while the P filling layer creates a topography above the P pole tip, depositing a DLC polishing stop layer over the P target thickness filling layer, and chemically mechanically polishing (CMP) any topography above the stop layer-covered P target thickness filling layer to the stop layer using a selective slurry.

US Patent:

7144518, Dec 5, 2006

Filed:

Dec 11, 2003

Appl. No.:

10/734361

Inventors:

Christopher W. Bergevin - San Jose CA, US
Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
John Jaekoyun Yang - Newark CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

B44C 1/22

US Classification:

216 22

Abstract:

A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of AlO, adjusting the concentration of HOin said slurry to within a range of 6–12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55–90 rpm, and adjusting polishing pressure to within a range of 5–7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.

US Patent:

7217666, May 15, 2007

Filed:

Mar 2, 2004

Appl. No.:

10/792330

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Jerry Lo - San Jose CA, US
Aron Pentek - San Jose CA, US
Yi Zheng - San Ramon CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

H01L 21/461

US Classification:

438738, 438 3, 438 64, 438712, 257E21218, 360 9701, 360125, 2960307, 2960316

Abstract:

A method for forming a high aspect ratio magnetic structure in a magnetic write head using a combination of chemical mechanical polishing and reactive ion etching.

US Patent:

7220167, May 22, 2007

Filed:

Jan 11, 2005

Appl. No.:

11/034340

Inventors:

Hung-Chin Guthrie - Santa Clara CA, US
Ming Jiang - San Jose CA, US
John Jaekoyun Yang - Newark CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

B24B 1/00

US Classification:

451 41, 451 59

Abstract:

A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e. g. , slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

US Patent:

7264535, Sep 4, 2007

Filed:

Apr 23, 2004

Appl. No.:

10/831592

Inventors:

Hung- Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Yeak-Chong Wong - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V.

International Classification:

B24B 49/00

US Classification:

451 5, 451 41

Abstract:

During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure. ” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e. g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

US Patent:

7279424, Oct 9, 2007

Filed:

Aug 27, 2004

Appl. No.:

10/928002

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Hong Zhang - Fremont CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

H01L 21/302

US Classification:

438692, 216 22, 216 88, 216 83, 216 37, 216 89, 216 99, 216102

Abstract:

A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.