Patrick Ho Chung

US Patent:

8501283, Aug 6, 2013

Filed:

Oct 19, 2010

Appl. No.:

12/907149

Inventors:

Patrick Chung - Fremont CA, US
Yunsang Kim - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 1/24

US Classification:

427569

Abstract:

A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.

US Patent:

20080308526, Dec 18, 2008

Filed:

Jun 18, 2007

Appl. No.:

11/820334

Inventors:

Tamarak Pandhumsoporn - Fremont CA, US
Patrick Chung - Tracy CA, US
Jackie Seto - Mountain View CA, US
S.M. Reza Sadjadi - Saratoga CA, US

International Classification:

H01L 21/3065
B44C 1/22

US Classification:

216 37, 15634529

Abstract:

A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising CF, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.

US Patent:

20120298301, Nov 29, 2012

Filed:

Aug 10, 2012

Appl. No.:

13/572061

Inventors:

Tamarak Pandhumsoporn - Fremont CA, US
Patrick Chung - Tracy CA, US
Jackie Seto - Mountain View CA, US
S. M. Reza Sadjadi - Saratoga CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

C23F 1/08

US Classification:

15634524

Abstract:

A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising CF, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.

US Patent:

20130312913, Nov 28, 2013

Filed:

Aug 5, 2013

Appl. No.:

13/959595

Inventors:

Patrick Chung - Fremont CA, US
Yunsang Kim - Fremont CA, US

International Classification:

H01L 21/67

US Classification:

15634548, 118720, 118712, 118723 I

Abstract:

An arrangement for depositing a film at a bevel edge of a substrate in a plasma chamber. The arrangement includes a gas delivery system for supplying gas into the chamber. The arrangement also includes a pair of electrodes including a movable electrode and a stationary electrode, wherein the substrate is disposed on one of the pair of electrodes. The arrangement further includes a gap controller module configured for adjusting an electrode gap between the pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of the substrate. The gap distance is also dimensioned such that a plasma-sustainable condition around the bevel edge of the substrate is formed. The arrangement moreover includes a heater disposed below the substrate and powered by an RE source, wherein the heater is maintained at a chuck temperature conducive for facilitating film deposition on the bevel edge of the substrate.

US Patent:

20170053820, Feb 23, 2017

Filed:

Jul 8, 2016

Appl. No.:

15/205253

Inventors:

- Fremont CA, US
Rajesh Dorai - Fremont CA, US
Tamarak Pandhumsoporn - Fremont CA, US
Brett C. Richardson - San Ramon CA, US
James C. Vetter - Pine Grove CA, US
Patrick Chung - Tracy CA, US

International Classification:

H01L 21/683
H01J 37/32

Abstract:

An edge ring assembly is provided, including: an upper edge ring configured to surround an electrostatic chuck (ESC), the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf; a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC; a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material.