Patrick G Shea

US Patent:

20130119351, May 16, 2013

Filed:

Nov 11, 2011

Appl. No.:

13/294473

Inventors:

Patrick B. Shea - Alexandria VA, US
Erica C. Folk - Linthicum Heights MD, US
Daniel J. Ewing - Kensington MD, US
John J. Talvacchio - Ellicott City MD, US

International Classification:

H01L 39/22

US Classification:

257 31, 438 2, 257E39014

Abstract:

Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

US Patent:

20180069142, Mar 8, 2018

Filed:

Nov 8, 2017

Appl. No.:

15/806798

Inventors:

- Falls Church VA, US
PATRICK BRUCKNER SHEA - Alexandria VA, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - Falls Church VA

International Classification:

H01L 31/054
H01L 31/18
H01L 31/0236

Abstract:

A solar cell has a backside resonant waveguide structure. The backside structure includes a plurality of resonant waveguides formed in or on a semiconductor-based light absorbing material and arranged in a pattern to cause laterally scattered light to be at least partially confined in the semiconductor-based light absorbing material.

US Patent:

20180026148, Jan 25, 2018

Filed:

Jul 20, 2016

Appl. No.:

15/214890

Inventors:

- Falls Church VA, US
PATRICK BRUCKNER SHEA - ALEXANDRIA VA, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - Falls Church VA

International Classification:

H01L 31/054
H01L 31/18
H01L 31/0236

Abstract:

A solar cell has a backside resonant waveguide structure. The backside structure includes a plurality of resonant waveguides formed in or on a semiconductor-based light absorbing material and arranged in a pattern to cause laterally scattered light to be at least partially confined in the semiconductor-based light absorbing material.

US Patent:

20140357493, Dec 4, 2014

Filed:

Aug 15, 2014

Appl. No.:

14/460988

Inventors:

PATRICK B. SHEA - ALEXANDRIA VA, US
ERICA C. FOLK - LINTHICUM HEIGHTS MD, US
DANIEL J. EWING - OVERLAND PARK KS, US
JOHN J. TALVACCHIO - ELLICOTT CITY MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

G06N 99/00
H01L 39/22
H01L 39/24

US Classification:

505170, 257 32

Abstract:

A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.

Address:

37 Ruffian Dr, Stafford, VA 22556

VIN:

2T1BR32E77C754019

Make:

TOYOTA

Model:

COROLLA

Year:

2007