Pengcheng C Lv

US Patent:

20040228371, Nov 18, 2004

Filed:

Apr 7, 2004

Appl. No.:

10/820185

Inventors:

James Kolodzey - Landenberg PA, US
Samit Ray - Iit Kharagpur, IN
Thomas Adam - Poughkeepsie NY, US
Pengcheng Lv - Newark DE, US
Ralph Troeger - Owing Mills MD, US
Miron Kagan - Moscow District, RU
Irina Yassievich - St. Petersburg, RU
Maxim Odnoblyudov - St. Petersburg, RU

International Classification:

H01S003/30

US Classification:

372/005000, 250/338400, 250/493100, 438/045000, 438/057000

Abstract:

An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).

US Patent:

20110024650, Feb 3, 2011

Filed:

Jun 9, 2010

Appl. No.:

12/796795

Inventors:

JAMES KOLODZEY - Landenberg PA, US
Matthew Coppinger - Newark DE, US
Guangchi Xuan - Santa Clara CA, US
Pengcheng Lv - Newark DE, US

Assignee:

UNIVERSITY OF DELAWARE - Newark DE

International Classification:

G21K 5/02
H01L 29/66

US Classification:

2504931, 257 77, 257E29166

Abstract:

Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 10cm; a boron dopant having a concentration of approximately 10cm; and an aluminum dopant having a concentration of approximately 10cm. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.