Dev Alok - Danbury CT Emil Arnold - Chappaqua NY Richard Egloff - Yorktown Heights NY Satyendranath Mukherjee - Yorktown Heights NY
Assignee:
Koninklijke Philips Electronics N.V. - Eindhoven
International Classification:
H01L 21469
US Classification:
438770, 438769, 438771
Abstract:
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.
Nov 2012 to 2000 Manager AssociateBrookwood Town Houses
Jun 2009 to 2000 Head LifeguardAmerican Leisure Corp Middle Island, NY May 2007 to Aug 2008 LifeguardTanger Outlets Riverhead, NY Nov 2006 to May 2007 Sales AssociateK-Mart Middle Island, NY Nov 2005 to May 2006 Sales Associate
Education:
The College of Saint Rose Albany, NY 2007 to 2012 Bachelor of Arts in Criminal Justice
Youtube
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