Richard Harris Ross

US Patent:

8158983, Apr 17, 2012

Filed:

Dec 23, 2008

Appl. No.:

12/317635

Inventors:

Karl W. Beeson - Princeton NJ, US
Scott M. Zimmerman - Basking Ridge NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01L 33/00
H01L 31/101

US Classification:

257 72, 257 59, 257291, 257432, 257E33005, 257E31054, 257 88

Abstract:

A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

US Patent:

8558438, Oct 15, 2013

Filed:

Feb 27, 2009

Appl. No.:

12/380439

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01R 11/30
H01R 11/11

US Classification:

313 51, 313485, 313503, 362581

Abstract:

Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source.

US Patent:

8575641, Nov 5, 2013

Filed:

Aug 10, 2012

Appl. No.:

13/572608

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US
Eduardo DeAnda - San Diego CA, US

Assignee:

Goldeneye, Inc - San Diego CA

International Classification:

H01L 33/64

US Classification:

257 98, 257E33075

Abstract:

Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate the need for any additional heatsinking means by efficiently transferring and spreading out the heat generated in LED and luminescent element itself over an area sufficiently large enough such that convective and radiative means can be used to cool the device.

US Patent:

8609470, Dec 17, 2013

Filed:

Apr 16, 2012

Appl. No.:

13/506383

Inventors:

Karl W. Beeson - Princeton NJ, US
Scott M. Zimmerman - Basking Ridge NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01L 21/50
H01L 21/56

US Classification:

438125, 438 26, 438 34, 438 64, 438110, 257E21499, 257E21504

Abstract:

A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

US Patent:

8633493, Jan 21, 2014

Filed:

Jul 31, 2009

Appl. No.:

12/462295

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01L 29/20

US Classification:

257 76, 257E29089

Abstract:

Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm.

US Patent:

20080149166, Jun 26, 2008

Filed:

Dec 21, 2006

Appl. No.:

11/644678

Inventors:

Karl W. Beeson - Princeton NJ, US
Scott M. Zimmerman - Baskin Ridge NJ, US
Richard L. Ross - Del Mar CA, US
William R. Livesay - San Diego CA, US

International Classification:

H01L 31/042

US Classification:

136248

Abstract:

A light conversion device and high-intensity, solid-state light source utilize wavelength conversion elements with a thermal conductivity greater than 1 watt per meter per degree Kelvin (W/m-K). Exemplary materials that have high thermal conductivity include monocrystalline solids, polycrystalline solids, substantially densified ceramic solids, amorphous solids or composite solids. The light conversion device and high-intensity, solid-state light source have at least one heat sink that is in direct thermal contact with the wavelength conversion element. The heat sink quickly dissipates heat generated within the wavelength conversion element in order to prevent the wavelength conversion element from overheating and undergoing thermal quenching of the wavelength conversion and light emission.

US Patent:

20090140279, Jun 4, 2009

Filed:

Jul 31, 2008

Appl. No.:

12/221304

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 33/00

US Classification:

257 98, 257E33023

Abstract:

A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy.

US Patent:

20090218589, Sep 3, 2009

Filed:

Feb 27, 2009

Appl. No.:

12/380470

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 33/00
H01L 29/12

US Classification:

257 99, 257191, 257613, 257712, 257E33066, 257E29068

Abstract:

Thermal boundary resistances within nitride semiconductor LEDs are reduced or eliminated by forming a thick nitride epitaxial layer, which can be separated from a growth substrate, and by reducing the number of thermal boundary layers during laser lift-off. The thermal boundary resistances within nitride semiconductor LEDs can also be reduced or eliminated by forming a plurality of thin nitride epitaxial layers.