Robert E Hooper

US Patent:

48434531, Jun 27, 1989

Filed:

Aug 13, 1987

Appl. No.:

7/084958

Inventors:

Robert C. Hooper - Houston TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2348
B05D 304

US Classification:

357 71

Abstract:

Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.

US Patent:

46198873, Oct 28, 1986

Filed:

Sep 13, 1985

Appl. No.:

6/762886

Inventors:

Robert C. Hooper - Houston TX
Douglas P. Verret - Sugar Land TX
Bobby A. Roane - Manvel TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G03C 500

US Classification:

430313

Abstract:

A method of plating an interconnect or contact metal of higher conductivity than aluminum onto a metal layer in VLSI devices includes depositing a coating of insulator over the metal layer, patterning and etching the insulator coating into a mask of the reverse image of a desired lead pattern and then depositing the interconnect metal onto the exposed metal layer. Following depositing the insulator mask and underlaying metal is selectively removed.

US Patent:

47420146, May 3, 1988

Filed:

May 10, 1985

Appl. No.:

6/732547

Inventors:

Robert C. Hooper - Houston TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2128

US Classification:

437192

Abstract:

Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.

US Patent:

48814652, Nov 21, 1989

Filed:

Sep 1, 1988

Appl. No.:

7/239310

Inventors:

Robert C. Hooper - Houston TX
Franz R. Brotzen - Houston TX

International Classification:

F42B 524

US Classification:

102501

Abstract:

A non-toxic shotgun pellet having ballistic characteristics similar to those of lead shot is made up of particles of a first alloy, containing primarily ferrotungsten, suspended in a matrix of a second alloy, containing primarily lead. The relative amounts of lead and ferrotungsten are selected to minimize cost while keeping the overall lead content to forty percent or less, by weight, to avoid toxicity. The first alloy is formed by diluting the ferrotungsten with iron or steel and carbon at temperatures on the order of 1800. degree. C. in an inert gas environment. The alloy is quenched and then crushed into particles over which is poured the second alloy comprising lead, tin and antimony in order to suspend the first alloy particles in the second alloy mixture.

US Patent:

41827813, Jan 8, 1980

Filed:

Sep 21, 1977

Appl. No.:

5/835385

Inventors:

Robert C. Hooper - Houston TX
Alexander J. Harrover - Missouri City TX
Michael J. VanHoy - Stafford TX
Charles E. Terry - Houston TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 302

US Classification:

427 90

Abstract:

Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i. e. , without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then covered with an insulation layer wherein apertures are opened to expose palladium at selected sites for immersion in an electroless plating bath of ionic Cu or Ni for bump formation.