Rong R Liang

US Patent:

8638492, Jan 28, 2014

Filed:

Jan 7, 2011

Appl. No.:

12/930485

Inventors:

Jau Shiu Chen - Taipei, TW
Rong Chang Liang - Cupertino CA, US
Ming Wei Tsai - Chiayi, TW

Assignee:

Delta Electronics, Inc. - Taoyuan County

International Classification:

G02B 26/00

US Classification:

359296

Abstract:

In an electrophoretic display device comprising a plurality of pixels, each pixel having a cell area containing a plurality of charged pigment particles dispersed between two opposite electrodes, a semiconducting passivation layer is provided on one or both of the two opposite electrodes. The semiconducting passivation layer can be made of MO, MS, or MNwhere M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnO, ZnS, CdSand TiOor a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type doner or a p-type acceptor, the n-type doner is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca.