Rui Y Jiang

US Patent:

20130000773, Jan 3, 2013

Filed:

Jun 30, 2011

Appl. No.:

13/174484

Inventors:

Rui Jiang - San Diego CA, US
Joshua Jon Thornes - San Diego CA, US
Daniel Jason Riggs - San Diego CA, US
Kevin Michael O'Brien - San Diego CA, US

Assignee:

CYMER, INC. - San Diego CA

International Classification:

B65B 31/04

US Classification:

141 8, 141 65

Abstract:

Systems and methods for automatically performing a high accuracy gas refill in a laser chamber of a two chamber gas discharge laser such as an excimer laser are disclosed. Based upon a target pressure and halogen concentration that is either predetermined or entered by a user, and with no further user action, a non-halogen containing gas is added to the chamber to a first pressure, followed by the addition of halogen containing gas to a second pressure which is greater than a target pressure for the chamber, such that the halogen content in the gas at the second pressure is at a desired concentration. The gas in the chamber is bled until the pressure drops to the target pressure. The amount of non-halogen containing gas added is estimated automatically, and the amount of halogen containing gas is measured so that the desired concentration is obtained, taking into account both temperature and any gas remaining in the fill pipes from prior laser operation.

US Patent:

20130003773, Jan 3, 2013

Filed:

Jun 30, 2011

Appl. No.:

13/174640

Inventors:

Kevin Michael O'Brien - San Diego CA, US
Joshua Jon Thornes - San Diego CA, US
Daniel Jason Riggs - San Diego CA, US
Rui Jiang - San Diego CA, US

Assignee:

CYMER, INC. - San Diego CA

International Classification:

H01S 3/22

US Classification:

372 55

Abstract:

A system and method for automatically performing gas optimization after a refill in the chambers of a two chamber gas discharge laser such as an excimer laser is disclosed. The laser is continuously fired at a low power output, and the gas in the amplifier laser chamber bled if necessary until the discharge voltage meets or exceeds a minimum value without dropping the pressure below a minimum value. The power output is increased, and the gas bled again if necessary until the voltage and pressure meet or exceed the minimum values. The laser is then fired in a burst pattern that approximates the expected firing of the laser in operation, and the gas bled if necessary until the discharge voltage meets or exceeds the minimum value and the output energy meets or exceeds a minimum value, again without dropping the pressure in the chamber below the minimum value. Once the minimum values are provided, the process runs quickly without manual interaction.

US Patent:

20190224047, Jul 25, 2019

Filed:

Jan 23, 2019

Appl. No.:

16/254765

Inventors:

- Dover DE, US
Adarsh Narayan Battu - Fremont CA, US
Rui Jing Jiang - Lexington MA, US

International Classification:

A61F 9/007

Abstract:

Described herein is a device for lowering intraocular pressure, the device comprising a plate structure comprising an upper surface opposite a lower surface, the plate structure formed from a multi-directional plate having a plate thickness ranging from about 1 nm to about 1,000 nm.

US Patent:

20180011409, Jan 11, 2018

Filed:

Jun 20, 2017

Appl. No.:

15/627518

Inventors:

- San Diego CA, US
Omar Zurita - San Diego CA, US
Gregory Allen Rechtsteiner - San Diego CA, US
Paolo Alagna - Leuven, BE
Simon Hsieh - Taipei City, TW
Jason J. Lee - Beaverton OR, US
Rostislav Rokitski - La Jolla CA, US
Rui Jiang - San Diego CA, US

International Classification:

G03F 7/20

Abstract:

A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.

US Patent:

20150070673, Mar 12, 2015

Filed:

Jun 4, 2014

Appl. No.:

14/295558

Inventors:

- San Diego CA, US
Omar Zurita - San Diego CA, US
Gregory Allen Rechtsteiner - San Diego CA, US
Paolo Alagna - Leuven, BE
Simon Hsieh - Taipei City, TW
Jason J. Lee - Beaverton OR, US
Rostislav Rokitski - La Jolla CA, US
Rui Jiang - San Diego CA, US

International Classification:

G03F 7/20

US Classification:

355 67

Abstract:

A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.