Scott David Wolter

US Patent:

7868354, Jan 11, 2011

Filed:

Nov 8, 2007

Appl. No.:

11/937375

Inventors:

Michael A. Garcia - Durham NC, US
Scott D. Wolter - Durham NC, US
April S. Brown - Durham NC, US
Joseph Bonaventura - Durham NC, US
Thomas F. Kuech - Madison WI, US

Assignee:

Duke University - Durham NC

International Classification:

H01L 31/119

US Classification:

257192, 257253, 257414, 257258, 257E31089

Abstract:

GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e. g. , SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.

US Patent:

8471294, Jun 25, 2013

Filed:

Nov 18, 2010

Appl. No.:

12/948946

Inventors:

Michael A. Garcia - Durham NC, US
Scott D. Wolter - Durham NC, US
April S. Brown - Durham NC, US
Joseph Bonaventura - Durham NC, US
Thomas F. Kuech - Madison WI, US

Assignee:

Duke University - Durham NC

International Classification:

H01L 29/66

US Classification:

257192, 257253, 257E29216, 438116

Abstract:

GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e. g. , SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.

US Patent:

20110199102, Aug 18, 2011

Filed:

Jun 16, 2009

Appl. No.:

12/999262

Inventors:

Michael A. Garcia - Durham NC, US
Scott D. Wolter - Durham NC, US
April S. Brown - Durham NC, US
William V. Lampert - Durham NC, US

International Classification:

G01R 27/26
B01L 99/00
G01R 27/08
G01R 19/00

US Classification:

324658, 422 69, 324691, 324 7611

Abstract:

A van der Pauw (VDP) sensor comprising an electronic circuit electrically coupled to a surface, the surface comprising a type III-V material, and the electronic circuit measuring a sheet resistivity of the surface using a VDP technique. The VDP sensor may further comprise a macromolecule, such as a porphyrin, an oligonucleotide, a protein, a polymer or a combination thereof in contact with the surface. The VDP sensors may be arranged in an array of similar or different sensors. An electronic circuit electrically coupled to a type III-V material having a two-dimensional electron gas, such as InAs or InN, the electronic circuit measuring an electrical property of the type III-V material having a two-dimensional electron gas.

US Patent:

20120122736, May 17, 2012

Filed:

Feb 11, 2010

Appl. No.:

13/201181

Inventors:

R. Michael Angelo - Berkeley CA, US
April S. Brown - Hillsborough NC, US
Scott Wolter - Hillsborough NC, US
William V. Lampert - Raleigh NC, US

Assignee:

DUKE UNIVERSITY - Durham NC

International Classification:

G01N 27/00
C40B 40/10
H01L 21/00
G01N 27/22
G01N 27/04
C12Q 1/70
C12M 1/34
G01N 27/02

US Classification:

506 18, 4352872, 436501, 435 5, 435 72, 435 731, 435 732, 422 69, 29 2501

Abstract:

A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.

US Patent:

55803806, Dec 3, 1996

Filed:

Jan 30, 1995

Appl. No.:

8/380079

Inventors:

Jiang Liu - Raleigh NC
Scott Wolter - Zebulon NC
Michael T. McClure - Raleigh NC
Brian R. Stoner - Chapel Hill NC
Jeffrey T. Glass - Apex NC
John J. Hren - Cary NC

Assignee:

North Carolina State University - Raleigh NC

International Classification:

C30B 2904

US Classification:

117 85

Abstract:

A method for making a field emitter comprising the steps of providing a projection; electrically biasing the projection; and exposing the electrically biased projection to a hydrocarbon containing plasma to form a layer of diamond nuclei on the projection. The diamond nuclei are relatively inert and have a high nucleation density. The projection is preferably a material capable of forming a carbide, such as (111) oriented silicon. Refractory metals may also be used for the projection. The electrical biasing is preferably at a voltage in a range of about -150 to -250 volts. The hydrocarbon containing plasma preferably comprises a plasma including about 2 to 5% by weight of methane in hydrogen. An intervening carbide layer is preferably formed at a surface of the projection and underlying the layer of diamond nuclei. The field emitter produced by the method and having a relatively high diamond nucleation density is also disclosed.