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Sofia I Pombrik

age ~49

from Bethel, CT

Also known as:
  • Sophia I Pombrik
  • Sofia N
  • Sofia K
Phone and address:
2 Topstone Dr, Bethel, CT 06801
(203)7781476

Sofia Pombrik Phones & Addresses

  • 2 Topstone Dr, Bethel, CT 06801 • (203)7781476
  • Endicott, NY
  • Vestal, NY
  • Washington, DC
  • 2 Topstone Dr, Bethel, CT 06801 • (203)8035522

Work

  • Position:
    Clerical/White Collar
Name / Title
Company / Classification
Phones & Addresses
Sofia Pombrik
POMBRIK CONSULTING LLC
211 Greenwood Ave 2-2 #166, Bethel, CT 06801

Us Patents

  • Source Reagent Compositions And Method For Forming Metal Films On A Substrate By Chemical Vapor Deposition

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  • US Patent:
    8299286, Oct 30, 2012
  • Filed:
    Dec 4, 2007
  • Appl. No.:
    11/949871
  • Inventors:
    Robin A. Gardiner - Strasslach, DE
    Thomas H. Baum - New Fairfield CT, US
    Douglas Cameron Gordon - Durango CO, US
    Timothy E. Glassman - Portland OR, US
    Sofia Pombrik - Bethel CT, US
    Brian A. Vaartstra - Nampa ID, US
    Peter S. Kirlin - Austin TX, US
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
  • International Classification:
    C07F 7/00
    C23C 18/00
  • US Classification:
    556 40, 106 125
  • Abstract:
    A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
  • Precursor Compositions For Chemical Vapor Deposition, And Ligand Exchange Resistant Metal-Organic Precursor Solutions Comprising Same

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  • US Patent:
    58206647, Oct 13, 1998
  • Filed:
    Mar 31, 1995
  • Appl. No.:
    8/414504
  • Inventors:
    Robin A. Gardiner - Bethel CT
    Peter S. Kirlin - Bethel CT
    Thomas H. Baum - New Fairfield CT
    Douglas Gordon - Salt Lake City UT
    Timothy E. Glassman - Danbury CT
    Sofia Pombrik - Bethel CT
    Brian A. Vaartstra - Brookfield CT
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
  • International Classification:
    C09K 300
    C23C 1640
  • US Classification:
    10628717
  • Abstract:
    A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of:. beta. -diketonates,. beta. -ketoiminates,. beta. -diiminates, C. sub. 1 -C. sub. 8 alkyl, C. sub. 2 -C. sub. 10 alkenyl, C. sub. 2 -C. sub. 15 cycloalkenyl, C. sub. 6 -C. sub. 10 aryl, C. sub. 1 -C. sub. 8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
  • Platinum Source Compositions For Chemical Vapor Deposition Of Platinum

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  • US Patent:
    61627127, Dec 19, 2000
  • Filed:
    Jan 16, 1998
  • Appl. No.:
    9/008705
  • Inventors:
    Thomas H. Baum - New Fairfield CT
    Peter S. Kirlin - Bethel CT
    Sofia Pombrik - Bethel CT
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
  • International Classification:
    H01L 2144
  • US Classification:
    438580
  • Abstract:
    A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'. sub. 3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(. beta. -diketonates). sub. 2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
  • Method Of Forming Metal Films On A Substrate By Chemical Vapor Deposition

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  • US Patent:
    61105295, Aug 29, 2000
  • Filed:
    Jun 7, 1995
  • Appl. No.:
    8/484654
  • Inventors:
    Robin A. Gardiner - Bethel CT
    Peter S. Kirlin - Bethel CT
    Thomas H. Baum - New Fairfield CT
    Douglas Gordon - Salt Lake City UT
    Timothy E. Glassman - Danbury CT
    Sofia Pombrik - Bethel CT
    Brian A. Vaartstra - Boise ID
  • International Classification:
    C23C 1600
  • US Classification:
    427250
  • Abstract:
    A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula: MA. sub. Y X wherein: M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA. sub. y with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of. beta. -diketonates,. beta.
  • Platinum Source Compositions For Chemical Vapor Deposition Of Platinum

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  • US Patent:
    57837163, Jul 21, 1998
  • Filed:
    Jun 28, 1996
  • Appl. No.:
    8/673372
  • Inventors:
    Thomas H. Baum - New Fairfield CT
    Peter S. Kirlin - Bethel CT
    Sofia Pombrik - Bethel CT
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
  • International Classification:
    C07F 1500
  • US Classification:
    556136
  • Abstract:
    A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'. sub. 3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(. beta. -diketonates). sub. 2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.

Mylife

Sofia Pombrik Photo 1

Aimee Pombrio Keeseville...

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Sofia Pombrik Sofia Pombrik Marianna Pombrik Vicky Pombriant Tythian Pombriant
Sofia Pombrik Photo 2

Alicia Pombrio Merrimack...

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Aimee Pombrio Sofia Pombrik Sofia Pombrik Marianna Pombrik Vicky Pombriant

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